Research on band-to-band tunneling via discrete dopants near pn junctions in Si nanodevices

这项研究的目的是阐明离散掺杂对硅纳米器件中隧道电流的影响。探索晶体管中掺杂的隧道效应是这种分析的基础，为此，我们研究了掺磷(P)的绝缘体上硅器件。作为主要目标，我们还制作和研究了窄耗尽层的pn/pin二极管。我们报道了高掺杂SOI晶体管的室温单电子隧穿，其中可以形成多掺杂量子点。在低浓度下，单电子通过单掺杂的隧穿进行了实验和理论分析。我们还报道了纳米级隧道二极管中带间隧道电流的阶跃，归因于耗尽层中的能态。

The purpose of this research was to elucidate effects of discrete dopants in tunneling currents flowing in Si nanodevices. Exploration of tunneling via dopants in transistors is fundamental for such analysis, for which we studied silicon-on-insulator devices doped with phosphorus (P). As a main target, we also fabricated and studied pn/pin diodes with narrow depletion layers.We reported room-temperature single-electron tunneling in highly-doped SOI transistors, in which multiple-dopant quantum dots can be formed.At low concentrations, single-electron tunneling via single dopants has been analyzed experimentally and theoretically.We also reported steps in band-to-band tunneling current in nanoscale tunnel diodes, ascribed to energy states in the depletion layer.