Spin-dependent tunneling in oxidic heterostructures (B06)

我们计划利用脉冲激光沉积技术制备iii型断隙氧化异质结构。由于一种材料的（能量较高的）p型价带与另一种材料的（能量较低的）s型导带之间存在隧道耦合，预计会存在块状带隙和拓扑保护的边缘态，其磁输运和隧道电阻将被实验研究。伴随的理论研究将考虑相互作用和无序效应对耗散边缘输运和可能的激子凝聚的影响。

We plan to fabricate type-III broken-gap oxidic heterostructures by using pulsed laser deposition. Because of a tunnel coupling between the (energetically higher) p-type valence band of one material and the (energetically lower) s-type conduction band of the other material the existence of a bulk band gap and topologically protected edge states is expected, whose magnetotransport and tunnel resistance will be experimentally investigated. An accompanying theoretical study will take into account the influence of interaction and disorder effects on dissipative edge transport and on possible exciton condensation.