Hafren - High Voltage Lateral Bulk CMOS FETs

Hafren将开发新型的基于横向mos的高压（HV）器件（Vbr>1kV），以取代超大且低效的垂直mosfet，用于医疗，消费电子（AC/DC转换器）和LED驱动器等需要高阻断电压和低电流驱动的应用。与垂直mosfet相比，这些横向器件将小6倍，电容低10倍，漏电流极低（<100nA @125C）。这将大大减少系统中的功率损耗，降低成本和系统占用空间，从而产生引人注目的产品。横向器件将基于CMOS技术，允许与其他外部组件（二极管、栅极驱动器、保护电路）进行单片集成，从而实现更紧凑、成本更低、效率更高的解决方案。所有端子在模具一侧的横向设计将使产品组装过程更简单，从而导致更便宜和更可靠的最终产品。此外，还将开发用于横向高压器件板上芯片组装的新型倒装芯片解决方案，再加上6倍小的mosfet，将进一步实现产品小型化。

Hafren will develop novel lateral MOS-based high voltage (HV) devices (Vbr>1kV) to replace oversized and inefficient vertical MOSFETs in a range of applications including medical, consumer electronics (AC/DC converters) and LED drivers where high blocking voltage and low current drive is required. When compared to vertical MOSFETs, these lateral devices will be 6 times smaller with up to 10 times lower capacitance and extremely low leakage currents (<100nA @125C). This will significantly reduce power losses in the system, reduce cost and system footprint resulting in a compelling product. Lateral devices will be based on CMOS technology permitting monolithic integration with other external components (diodes, gate drivers, protection circuits), enabling realisation of more compact lower cost solutions with improved efficiency. The lateral design with all terminals on one side of the die will enable simpler product assembly process, leading to cheaper and more reliable end products. Novel flip-chip solutions for Chip-on-Board assembly of lateral HV devices will also be developed, which will, coupled with 6 times smaller MOSFETs enable further product miniaturisation.