Towards room-temperature multiferroics by doping and ionic liquid gating

该项目旨在开发用于高性能计算和数据存储技术的新型多铁性材料。半导体行业的领导者已经确定，这些材料的发展，在室温下工作，作为一个关键的挑战，使未来的高速，高性能的逻辑和存储设备。 这项工作的预期成果是：（一）通过半导体的磁性掺杂，应变到铁电状态的新的多铁性材料的交付和（二）在材料设计中实现这种材料的新范例的示范。这项工作的主要好处是使下一代计算和存储设备能够表现出更高的速度，更小的尺寸和更低的功耗。

This project aims to develop new multiferroic materials for high performance computing and data storage technologies. Semiconductor industry leaders have identified the development of these materials, operating a room temperature, as a key challenge in enabling future high speed, high performance logic and memory devices. The intended outcomes of this work are (i) the delivery of new multiferroic materials by magnetic doping of a semiconductor, strained to a ferroelectric state and (ii) the demonstration of a new paradigm in materials design to realise such materials. The key benefit of this work is the enabling of next generation computing and memory devices exhibiting higher speeds, reduced sizes and lower power consumption.