To demonstrate the potential to make low cost, high efficiency LEDs using 3C-SiC substrates

该项目的目的是在Anvil的碳化硅硅片（3C-SiC/Si）上开发高效，低成本的GaN基led。Anvil最近与剑桥大学完成了一项由Innovate UK资助的可行性研究，该研究证明了其为低成本高效率功率器件开发的c - sic层，通过提供立方衬底，可以在大直径硅片上生长单相立方GaN，在led中具有令人兴奋的应用。在大直径硅片上生产立方氮化镓的能力显然被认为是提高LED照明效率和降低成本的关键因素。Plessey已经开始将传统的（六边形）GaN生产的led商业化，这些led是使用剑桥大学最初开发的IP在大直径硅片上生长的。Anvil的IP管理了在硅片上生长SiC时不可避免的压力。该项目将这三种技术结合在一起，生产高效率、低成本的led。这样的成本/性能改进将对LED市场产生破坏性影响，推动白炽灯和节能灯被固态照明取代。

The purpose of the project is to develop high efficiency, low cost GaN based LEDs on Anvil’s silicon carbide onsilicon wafers (3C-SiC/Si). Anvil has recently completed an Innovate UK funded feasibility study with theUniversity of Cambridge that demonstrated its 3C-SiC layers, developed for low cost high efficiency powerdevices, have an exciting application in LEDs by providing a cubic substrate that enables the growth of singlephase cubic GaN on large diameter silicon wafers. The ability to produce cubic GaN on large diameter siliconwafers is clearly recognised as a key enabler for increasing the efficiency and reducing the cost of LED lighting.Plessey have started to commercialise LEDs produced in conventional (Hexagonal) GaN grown on largediameter silicon wafers using IP originally developed at The University of Cambridge. Anvil’s IP manages theinevitable stresses when growing SiC on silicon wafers. The project brings these three technologies together, toproduce high efficiency, low cost LEDs. Such a cost/performance improvement would have a disruptive effecton the LED market advancing the replacement of incandescent lights and CFLs with solid state lighting.