Defect generation in hetero-epitaxy on lattice mismatched substrates

高质量的晶格失配半导体异质结构是下一代电子和光电器件的核心技术，具有新的功能和特征，如单片集成、更低的生产成本、更大的晶片尺寸和更好的系统鲁棒性。该项目将产生新的科学缺陷产生晶格失配异质外延的目的是开发新的战略，使其最小化。直接结果将是晶格失配的Si或III-V族衬底上的更高质量的HgCdTe材料，其缺陷密度足够低，用于制造具有更低成本、更大阵列尺寸和更高工作温度的高性能中波和长波红外阵列。

High quality lattice mismatched semiconductor heterostructures are core enabling technologies for next generation electronic and optoelectronic devices with new functions and features such as monolithic integration, lower production costs, larger wafer size, and better system robustness. This project will generate new science on defect generation in lattice mismatched hetero-epitaxy with the aim of developing novel strategies for their minimisation. The direct outcome will be higher quality HgCdTe materials on lattice mismatched Si or III-V substrates with defect density low enough for fabricating high performance mid-wave and long-wave infrared arrays with features of lower cost, larger array format size, and higher operating temperature.