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Development of HV-CMOS sensor technology for the next generation of particle physics experiments

Development of HV-CMOS sensor technology for the next generation of particle physics experiments
开发用于下一代粒子物理实验的 HV-CMOS 传感器技术
批准号:
MR/S016449/1
负责人:
Eva Vilella Figueras
金额:
$148.98万
依托单位:
依托单位国家:
英国
项目类别:
Fellowship
财政年份:
2019
资助国家:
英国
项目状态:
已结题
起止时间:
2019 至 --

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中文摘要
翻译
在过去的25年里,硅传感器技术已经成为基础物理中最具挑战性的实验成功的关键因素。最值得注意的是,如果没有位于CERN探测器核心的非常细粒度的传感器来测量(跟踪)每秒产生数千万次的数千个粒子的轨迹,希格斯玻色子在大型强子对撞机(LHC)上的发现是不可能的。今天计划的下一代实验依赖于跟踪传感器技术性能的阶梯变化。科学家们正在寻找这样一种探测器,它能提供微米级的位置精度和优于一纳秒的时间分辨率,同时比一张纸薄得多,几乎不需要冷却。在这项研究中,我建议开发新型耗尽单片有源像素传感器(DMAPS),以使用行业标准,从而成本效益高的高电压互补金属氧化物半导体(HV-CMOS)工艺,在单个器件中实现这些参数。DMAPS已经被瑞士Paul Scherrer研究所的Mu3e实验选择为传感器技术,我正在为该研究所建造第一个DMAPS像素跟踪器,它将于2020年上线。还为大型强子对撞机ATLAS计划的第二阶段升级开发了DMA,预计将在2019年做出最终技术决定。在粒子物理仪表界,DMAPS将在下一代粒子物理实验中取代传统的跟踪传感器技术,这是一个广泛的共识。尽管DMAPS已经证明了重大改进,但未来粒子物理实验带来的巨大挑战需要进一步研究,以获得更高性能的传感器。本研究的主要目标是开发高性能的DMAPS,首先以减小像素面积、提高时间分辨率和提高辐射耐受性为目标。我还将开发性能优化的全尺寸DMAPS探测器,并致力于将这些设备部署到粒子物理实验和其他领域。这些新的探测器可以在实验中产生巨大的影响,例如计划中的Mu3e升级和未来在高亮度-LHC(HL-LHC)的升级,但也在医疗和商业领域,因为HV-CMOS工艺的典型低成本将使DMAPS跟踪探测器可供许多人使用。
英文摘要
Over the last 25 years, silicon sensor technology has become a critical ingredient in the success of the most challenging experiments in fundamental physics. The discovery of the Higgs boson at the Large Hadron Collider (LHC), most notably, would not have been possible without the very fine grained sensors which sit at the heart of the CERN detectors to measure (track) the trajectories of thousands of particles produced tens of millions of times per second. The next generation of experiments, being planned today, relies on a step-change in the performance of tracking sensor technologies. Scientists seek detectors that provide micron scale position accuracy and better than one nanosecond timing resolution, while being substantially thinner than a sheet of paper and requiring little cooling. To date it has not been possible to combine all of them in a single device.In this research, I propose to develop novel Depleted Monolithic Active Pixel Sensors (DMAPS) to achieve these parameters in a single device using industry standard, and therefore cost-effective, High Voltage-Complementary Metal-Oxide-Semiconductor (HV-CMOS) processes. DMAPS have already been adopted as the chosen sensor technology for the Mu3e experiment at the Paul Scherrer Institute in Switzerland, for which I work on the construction of the first DMAPS pixel tracker that will come online in 2020. DMAPS are also developed for the planned phase-II upgrade of ATLAS at the LHC, for which the final technology decision is expected in 2019. Within the particle physics instrumentation community, there is now a wide consensus that DMAPS will replace traditional tracking sensor technologies in the next generation of particle physics experiments.In spite of the major improvements already demonstrated by DMAPS, the enormous challenges set by future particle physics experiments demand further research to achieve yet more performant sensors. The main goal of this research is to develop highly performant DMAPS, targeting in the first place the reduction of the pixel area, the improvement of the time resolution and the increase of the radiation tolerance. I will also develop full-size DMAPS detectors with optimised performance and pursue the deployment of these devices for particle physics experiments and beyond. These new detectors can have a massive impact in experiments such as a planned upgrade of Mu3e and future upgrades at the High Luminosity-LHC (HL-LHC), but also in the medical and commercial fields as the low cost typical of HV-CMOS processes will make DMAPS tracking detectors available to many.
期刊论文(10)
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会议论文
Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade
用于 ATLAS ITk 升级的艾迈斯半导体 H35 和 aH18 技术的 CMOS 像素传感器原型的性能
DOI: 10.1016/j.nima.2018.07.061
发表时间: 2019
期刊: Accelerators, Spectrometers, Detectors and Associated Equipment
影响因子: --
作者: [Kiehn M]
通讯作者: Kiehn M
Characterisation of analogue front end and time walk in CMOS active pixel sensor
CMOS 有源像素传感器中模拟前端和时间行走的表征
DOI: 10.1088/1748-0221/16/12/p12020
发表时间: 2021
期刊: Journal of Instrumentation
影响因子: 1.3
作者: [Hiti B]
通讯作者: Hiti B
Design and characterisation of High-Voltage CMOS (HV-CMOS) detectors for particle physics experiments
用于粒子物理实验的高压 CMOS (HV-CMOS) 探测器的设计和表征
DOI: --
发表时间: 2022
期刊:
影响因子: --
作者: [Franks ML]
通讯作者: Franks ML
DOI: 10.1016/j.nima.2021.165679
发表时间: 2021-08-23
期刊: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
影响因子: 1.4
作者: [Arndt, K., Augustin, H., Zhong, T.]
通讯作者: Zhong, T.
共 9 条
    Exploitation of High Voltage CMOS sensors for tracking applications in physics experiments and beyond
    • 批准号:
      MR/X023834/1
    • 项目类别:
      Fellowship
    • 资助金额:
      $74.75万
    • 财政年份:
      2024
    • 负责人:
      Eva Vilella Figueras
    • 依托单位:
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    海外基金
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    • 批准号:
      2024JJ9472
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      省市级项目
    • 资助金额:
      --
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      2024
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    • 项目类别:
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    • 资助金额:
      30.0万元
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      2024
    • 负责人:
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    • 依托单位:
    电压门控氨离子通道Hv1在骨癌痛中的作用及机制研究
    • 批准号:
      --
    • 项目类别:
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      2024
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