CORWIN COUPLED RECIPROCAL WINDOWS

该项目的量子设备方面是有限的(对于 力矩)来研究碳纳米管的电导。管子 从乙醇溶液中吸收到玻璃基板上，然后 金属(AuPd或Al)在沉积的管子上蒸发 通过光学光刻掩模(特征尺寸为5微米) 定义总体特征(焊盘和互连)。后 蒸发时，管对纳米操纵器是“可见的”，因为 它们创建的表面特征是覆盖在它们上面的金属“窗帘”。 将光刻胶旋转到整个玻璃板上，然后 Nano Manipator被用来雕刻平版图像以形成 用于纳米管电学测量的亚微米特性。 在这样的电路中设置了三个独立的多壁管， 在室温下研究。选择性腐蚀剂的组合 对于AuPd和多壁管是一种可靠的制造工艺 管子上的金属触点。电阻率(&gt；0.1欧姆-厘米) 从室温测量推断出的结果与 理论预期和其他实验。因为这些 多壁管子上的测量结果更难清楚地解释 因为我们有可靠的单壁管材来源 实验室，目前多壁管子已经不再是 实验。更有趣的情况是单壁纳米管 (SWNT)尚未通过可靠的工艺生产。使用的HNO_3 刻蚀AuPd似乎插入和分散了SWNT束 在AUPD被蚀刻后被曝光。因此，我们有 恢复到在管子上涂铝和铝的选择性腐蚀剂 似乎对SWNT捆绑包更有利：它们仍在 铝覆盖层的去除。目前，室温电 暴露的单壁碳纳米管束的测量正在进行中。

The quantum device aspects of the project are limited (for the moment) to the study of conductance of carbon nanotubes. The tubes are absorbed from an ethanol solution onto a glass substrate and then metal (either AuPd or Al) is evaporated atop the deposited tubes through an optical lithographic mask (feature size 5 micron) that defines gross features (pads and interconnects). After the evaporation, tubes are "visible" to the nanoManipulator because of the surface features they create as the metal "drapes" over them. Photoresist is spun onto the whole glass plate, and the nanoManipulator is used to carve lithographic images to form the sub-micron features for the electrical measurement of the nanotube. Three separate multiwall tubes have been set in such circuits and studied at room temperature. The combination of selective etchants for AuPd and multiwall tubes is a reliable process for making the metal contacts to the tubes. The resistivity (> 0.1 Ohm - cm) inferred from room-temperature measurements is consistent with theoretical expectations and other experiments. Since these measurements on multiwall tubes are more difficult to interpret tidily and since we have a reliable source of single-wall tubes in Zhou's lab, for now the multiwall tubes have ceased to be the focus of experiments. The more interesting case of single-wall nanotubes (SWNT) has yet to be produced by a reliable process. The HNO_3 used to etch AuPd appears to intercalate and disperse the SWNT bundles that have been exposed when the AuPd is etched away. We have therefore reverted to coating the tubes with Al and the selective etchant for Al appears to be more benign to the SWNT bundles: they remain upon removal of the Al overlayer. At present, room-temperature electrical measurements are proceeding on the exposed SWNT bundles.