Development of Techniques and Algorithms for IGBT Digital Active Gate Drives

该项目属于EPSRC能源研究领域，涉及绝缘栅极双极晶体管（igbt）的有源栅极驱动技术的开发。有源栅极驱动器用于调整功率半导体器件的开关特性。对开关的精确控制是可取的，因为它可以用来最小化开关损耗，减少传导和辐射电磁干扰（EMI），并强制限制施加在半导体器件上的应力。模拟技术是目前使用的有源栅极驱动器的基础。如果在数字域产生控制响应，则能量损耗、电磁干扰和电压瞬变的控制更为可行。事实上，数字闭环控制系统具有在不同操作条件下实施复杂和灵活的控制和保护措施的潜力。该项目的目的是为igbt开发一种有效的概念验证数字有源栅极驱动器，并将其用作探索和测试数字控制技术和优化例程的平台。这项工作的潜在好处包括减少使用igbt的电力电子转换器的能量耗散，降低散热要求，从而使转换器更小，成本更低，并减少施加在器件上的电压应力。

This project falls within the EPSRC Energy research area, and is concerned with the development of active gate drive techniques for insulated-gate bipolar-transistors (IGBTs). Active gate drives are used to tailor the switching characteristics of power semiconductor devices. Precise control over the switching is desirable as it can be used to minimise switching losses, reduce both conducted and radiated electromagnetic interference (EMI), and enforce limits to the stresses applied to the semiconductor device.Analogue techniques underpin the active gate drives in use today. Control of energy losses, EMI, and voltage transients is more feasible if the generation of a control response is conducted in the digital domain. Indeed, a digital closed-loop control system has the potential for implementing sophisticated and flexible control and protection measures under varying operating conditions.The aim of this project is to develop a working proof-of-concept digital active gate drive for IGBTs, and to use this as a platform on which digital control techniques and optimisation routines can be explored and tested. Potential benefits of this work include the reduction of energy dissipation in power electronic converters using IGBTs, lowered heat dissipation requirements resulting in smaller, less costly converters, and a reduction in the voltage stresses applied to devices.