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Solution based CVD Approach to Metal Sulfide Thin Films

Solution based CVD Approach to Metal Sulfide Thin Films
基于溶液的金属硫化物薄膜 CVD 方法
批准号:
1927626
负责人:
金额:
$0.0万
依托单位:
依托单位国家:
英国
项目类别:
Studentship
财政年份:
2017
资助国家:
英国
项目状态:
已结题
起止时间:
2017 至 --

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中文摘要
翻译
在这个项目中,我们将开发可持续的路线,以薄膜金属硫化物材料从新的前体具有等效或更好的数字的优点,以现有的材料。这些薄膜将使用一种称为气溶胶辅助化学气相沉积(AACVD)的溶液化学气相沉积工艺进行开发。在AACVD中,前体在气溶胶中传输,关键要求是前体可溶,克服了传统CVD工艺的挥发性问题。这扩大了可以使用的前体的范围,并且可以通过在气溶胶中使用前体混合物来实现三元/四元材料的沉积。AACVD设备的快速加工和简单性意味着可以以低成本实现工业规模的工艺改进,并且该工艺可以在连续生产中发挥作用。这将产生高度功能性的薄膜,而不需要进一步的批量沉积后处理。
英文摘要
In this project we will develop sustainable routes to thin film metal sulfide materials from novel precursors with equivalent or better figures of merit to existing materials. The films will be developed using a solution based chemical vapour deposition process known as aerosol assisted chemical vapour deposition (AACVD). In AACVD, precursors are transported in the aerosol and the key requirement is for the precursor to be soluble, overcoming the volatility issues with traditional CVD processes. This expands the range of precursors that can be used and the deposition of ternary/quaternary materials can be achieved by using a precursor mix in the aerosol. The rapid processing and simplicity of the AACVD equipment means that modifications to the process at an industrial scale are achievable at low cost, and the process could function in continuous production. This would produce highly functional thin films with no need for further batch post-deposition treatment.
期刊论文(3)
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会议论文
DOI: 10.1021/jacs.0c10099
发表时间: 2020-11
期刊: Journal of the American Chemical Society
影响因子: 15
作者: [Kristian L Mears;Cary R. Stennett;Elina K Taskinen;C. Knapp;C. Carmalt;H. Tuononen;P. Power]
通讯作者: Kristian L Mears;Cary R. Stennett;Elina K Taskinen;C. Knapp;C. Carmalt;H. Tuononen;P. Power
国内基金
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  • 项目类别:
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  • 资助金额:
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  • 批准年份:
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  • 负责人:
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  • 批准号:
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  • 项目类别:
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  • 资助金额:
    --
  • 批准年份:
    2024
  • 负责人:
    HAOFEI ZHANG
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  • 批准号:
    52301178
  • 项目类别:
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  • 资助金额:
    30.00万元
  • 批准年份:
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  • 负责人:
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