Developing fabrication processes for optoelectronic integration

集成光电子学需要发展新的制造策略。例如，对于III-磷化物材料和III-P和/或III-AS硅材料，在刻蚀方面存在挑战，其中CS和硅的组合导致了不同的要求。在集成器件中，在提供表面钝化的小平面或层上沉积高反射率反射镜以及增加灾难性光学小平面损伤程度的过程并不简单。SPT有可以刻蚀刻面的工具，他们有可以在表面和表面法线表面沉积保形层的工艺。这些工艺可能会极大地提高集成器件的性能，因此该项目是为激光器开发这些工艺，作为最敏感的有源元件的例子，同时适用于完整的集成光电子电路。如果我们能够将高质量的刻蚀刻面工艺与晶片分割工艺结合起来，对单个器件或小型集成芯片也可能有好处。这些都是为硅开发的，但化合物半导体材料和器件可能会遭受重大或微小的损害，因为这些工艺目前使用。InAs量子点材料生长在GaAs晶格常数(在硅上)上，据说提供了一些容忍在有源器件中造成的损害，我们将研究InP晶格常数上的InAs量子点是否也提供这样的优势，这些与量子井有源器件相比如何，以及两者与解理面和/或划痕器件的对比如何。

The development of new fabrication strategies is required for integrated optoelectronics. For example, there are challenges in etching facets for III-phosphide materials, and III-P and / or III-As on Silicon where the combination of CS and silicon leads to different requirements. In integrated devices the processes to deposit high reflectivity mirrors on facets or layers providing surface passivation and increases in the catastrophic optical facet damage level are not straightforward. SPTS have tools that can etch facets and they have processes that can deposit conformal layers on surface and surface normal surfaces. These processes may hugely benefit the performance of integrated devices and so the project is about developing these processes for lasers, as an example of the most sensitive active component, while being appropriate for full scale integrated optoelectronic circuits.There may also be advantages for individual devices or small scale integrated chips if we can combine a high quality etched facet process with a wafer segmentation process. These are developed for silicon but the Compound Semiconductor materials and devices may suffer substantial or subtle damage from these processes as currently utilised.InAs Quantum Dot materials grown on an GaAs lattice constant (on Silicon) are said to offer some tolerance to damage created in active devices and we will examine whether the InAs quantum dots on an InP lattice constant (on Silicon) also offer such advantages and how these compare to quantum well active devices and how both compare to e.g. cleaved facet and /or scribed devices.