Characterising GaN transistors using contactless probes

在无线通信系统、交通电气化和可穿戴技术的商业发展的推动下，半导体晶体管的复杂性达到了前所未有的水平。每个晶体管形成一个复杂的网状微型结构，相互作用。众所周知，晶体管内的每个部分都将受到独特的电气条件的制约。然而，晶体管的测量主要集中在所有这些结构的共同和平均电流和电压上。因此，晶体管的最佳工作不考虑晶体管本身的变化条件。这个项目的目的是克服基本缺乏的信息和理解如何通过实际数据不同的晶体管元件的行为。为了实现其目标，该项目将研究使用微型探针来感应磁性和电探针，这些探针可以通过半导体晶体管扫描，以获得现有分布电流和电压波形的定量高分辨率图像。该项目的关键目标是建立新技术，在大频率范围内（高达100GHz）感应和量化化合物半导体器件的电场和磁场，然后从实际数据中发展对分布式晶体管结构如何影响其频率响应的基本理解。

Driven by commercial evolutions of wireless communication systems, electrification of transport, and wearable technology, semiconductor transistors have reached unprecedented complexity levels. Each transistor forms a complex mesh of miniature structures that are interacting with each other. It is well known that each part within the transistor will be subject to a unique electrical condition. Yet the measurement of transistors focuses on the common and averaged currents and voltages of all these structures together. Consequently, the optimum operation of transistors does not consider the varying conditions within the transistor itself.The purpose of this project is to overcome the fundamental lack of information and understanding on how the different transistor elements behave through actual data. To achieve its goals the project will investigate the use of miniaturised probes to sense the magnetic and electric probes that can be scanned across semiconductor transistors to obtain a quantitative high-resolution image of the existing distribution currents and voltage waveforms. The key objective within this project is to establish new techniques to sense and quantify the electric and magnetic near fields across a compound semiconductor device over a large range of frequencies (up to 100GHz) and then develop from actual data a fundamental understanding on how distributed transistor structures impact their frequency response.