Quantum devices based on silicon carbide transistors

牢不可破的密码学、信息的远距离传送和超高速计算将很快不再是科幻文学中的虚构。这些现在被认为是由量子技术的成长所实现的迫在眉睫的现实[1]。利用量子物理定律的设备正在迅速发展，许多材料目前正在接受审查，以构建未来的量子硬件[2-3]。本项目将研究碳化硅（SiC）中的量子效应，碳化硅是一种由硅和碳制成的宽带隙化合物半导体。该学生奖学金的目的是开发设备和测试技术，以电探测半导体晶体中的量子缺陷[4-5]。一个中心方面将是用于量子计算和量子传感的新型单电荷和单自旋电子器件的原型。该项目还旨在实现SiC量子器件的大规模集成和可扩展性，释放其商业可行性。研究活动将平衡器件设计和建模，动手洁净室制造以及低温下的电气测量。该学生将参与制造和表征从金属氧化物半导体纳米电容器到LED和场效应晶体管的设备。[1]欧洲量子旗舰https：//qt.eu [2] T.D.拉德（Ladd）等人，自然（Nature）464，45（2010）[3] D. D. Awschalom等人Science 339，1174（2013）[4] A. Lohrmann等人，Rep. Prog. Phys. 80，034502（2017）[5] M. Atature et al. Nature Reviews Materials 3，38（2018）

Unbreakable cryptography, teleportation of information and ultra-fast computing will soon cease to be figments of science fiction literature. These are now considered imminent realities enabled by the upbringing of quantum technologies [1]. Devices that exploit the laws of quantum physics are developing quickly and many materials are presently under scrutiny to build the future quantum hardware [2-3]. This project will investigate quantum effects in silicon carbide (SiC), a wide-bandgap compound semiconductor made of silicon and carbon. The aim of the studentship will be the development of device and testing technologies to electrically probe quantum defects in the semiconductor crystal [4-5]. A central aspect will be the prototyping of novel single-charge and single-spin electronics useful for quantum computing and quantum sensing. This project also aims at enabling large integration and scalability of SiC quantum devices, unlocking their commercial viability.The research activities will balance device design and modelling, hands-on cleanroom fabrication, as well as electrical measurements at cryogenic temperatures. The student will be involved in making and characterising devices that span from metal-oxide-semiconductor nano-capacitors to LEDs and field-effect transistors. [1] The European Quantum Flagship https://qt.eu[2] T.D. Ladd et al. Nature 464, 45 (2010)[3] D.D. Awschalom et al. Science 339, 1174 (2013) [4] A. Lohrmann et al. Rep. Prog. Phys. 80, 034502 (2017)[5] M. Atature et al. Nature Reviews Materials 3, 38 (2018)