Novel Short-Wave Mid-Infrared Devices for Si Photonics Applications

这个拟议的项目是过去两年在斯蒂芬·斯威尼教授的监督下开展的工作的继续，斯蒂芬·斯威尼教授将于2022年10月转到格拉斯哥大学。在此期间完成的工作主要集中在在硅平台上外延生长的发光器件上。这一领域对于实现用于硅光子学应用的光电集成电路(OEIC)特别感兴趣，因为许多无源元件已经成功地开发出来了。虽然III-V在通过晶片键合技术集成时取得了成功，但高质量有源区的外延生长仍然是扩大制造工艺的理想选择。这个广泛的主题被细分为两个相关但不同的感兴趣的领域。首先，在激光器件中，工作在2-3微米范围内的硅。由于在这一光谱区域有丰富的分子吸收线，在这些波长实现高质量的发射体有望开发用于医疗和环境传感的单芯片实验室OIC。通过利用高静水压和温度相关的测量技术，结合带模型，我们能够研究由载流子动力学引起的效率限制机制[1，2]。到目前为止，作为分别与蒙彼利埃大学和阿肯色州大学正在进行的合作的一部分，GASB和GeSnInvestigate已经实现了这一点，两所大学的论文都在酝酿之中。这是一项将在项目期间继续进行一些新样本的活动。该项目的第二个方面侧重于硅上基于量子点的单光子源。这是建立在与伦敦大学学院的合作基础上的。从第三年开始，人们将主要关注新型长波长量子点基单光子发射体的发展。半导体量子点是量子信息处理应用中按需单光子源的主要候选者。这项工作是对该大学研究的补充(例如，卢卡·萨皮恩扎博士的小组)。虽然大多数设备通常基于工作在900 nm左右的近红外的InAs技术，但最好将这种发射分别推向1300 nm和1550 nm的电信O波段和C波段。这将实现通过标准光纤进行芯片外传输，并将损耗降至最低。根据萨里的Sweeney小组的提议，可以通过带隙工程将III-VS与铋合金化，从而减少排放能量。在这项工作中，我们建议用低密度的铋离子通量掺杂低密度的InAs量子点样品，试图将发射转移到中红外，目的是走向预选点的近确定注入。然后进行表征参考文献[1]B.N.Murdin，A.R.Adams和S.J.Sweeney。能带结构和高压测量。In Anthony Krier，编辑，中红外半导体光电子学，第93-127页。斯普林格伦敦，伦敦，2006年。[2]S.J.Sweeney，T.D.Eales和I.P.Marko。中红外半导体材料和异质结构的物理学。在Eric Tourni‘e和Laurent Cerutti，编辑，中红外光电子学，Woodhead出版系列电子和光学材料，第3-56页。伍德黑德出版社，2020。[3]I.P.马尔科和S.J.斯威尼。基于双胺的激光器的物理学。《含铋合金和纳米结构》，王淑敏、陆鹏飞主编，第263-298页。斯普林格新加坡，新加坡，2019年。

This proposed project is to be a continuation of the work undertaken for the past two years under thesupervision of Professor Stephen Sweeney, who is transferring to the University of Glasgow in October 2022.Work completed during this time frame has focused primarily on light emitting devices that are epitaxiallygrown on Si platforms. This area is of particular interest for the realisation of optoelectronic integrated circuits(OEICs) for Si photonics applications, as many of the passive components have already been successfullydeveloped. Whilst III-Vs have illustrated success when integrated via wafer bonding techniques, epitaxialgrowth of high-quality active regions remains ideal for scaling manufacturing processes.This broad topic is subdivided into two related but distinct areas of interest. Firstly, in laser deviceson Si operating in the 2-3um range. Due to the abundance of molecular absorption lines in this spectralregion, realising high-quality emitters at these wavelengths promises the development of lab-on-a-chip OEICsfor applications in medical and environmental sensing. By utilising high hydrostatic pressure- and temperature dependentmeasurement techniques, in conjunction with band modelling, we are able to investigate efficiencylimiting mechanisms resulting from carrier dynamics [1, 2]. Thus far, this has been achieved for GaSb and GeSninvestigate as part of an ongoing collaboration with the universities of Montpellier and Arkansas, respectively,with papers in the pipeline for both. This is an activity that will continue for a number of novel samples overthe duration of the project.The second aspect of the project focuses on quantum dot based single photon sources on silicon. This hasbeen based on a collaboration with UCL. From the start of the third year, attention will be placed primarilyon the development of novel long wavelength quantum-dot based single-photon emitters on Si. Semiconductorquantum dots are a leading candidate for on-demand single-photon sources for quantum information processingapplications. This work is complementary to research at the university (e.g. the group of Dr Luca Sapienza).Whilst most devices are typically based on InAs technologies operating in the near infrared around 900nm, itwould be preferable to push this emission toward the telecommunications O- and C-bands at 1300 and 1550nm,respectively. This would enable transmission off-chip through standard fibre optics with minimised losses. Sucha reduction in emission energy can be achieved through bandgap engineering by alloying III-Vs with Bi, asproposed by the Sweeney group at Surrey [3]. In this work we propose doping of low density InAs quantum dotsamples with a low-density flux of Bi ions in an attempt to shift emission into the mid-infrared, with an aim ofmoving towards near-deterministic implantation of pre-selected dots. Characterisation is to then be conductedutilising a combinationReferences[1] B. N. Murdin, A. R. Adams, and S. J. Sweeney. Band structure and high-pressure measurements. In AnthonyKrier, editor, Mid-infrared Semiconductor Optoelectronics, pages 93-127. Springer London, London, 2006.[2] S. J. Sweeney, T. D. Eales, and I. P. Marko. The physics of mid-infrared semiconductor materials andheterostructures. In Eric Tourni'e and Laurent Cerutti, editors, Mid-infrared Optoelectronics, WoodheadPublishing Series in Electronic and Optical Materials, pages 3-56. Woodhead Publishing, 2020.[3] I. P. Marko and S. J. Sweeney. The physics of bismide-based lasers. In ShuminWang and Pengfei Lu, editors,Bismuth-Containing Alloys and Nanostructures, pages 263-298. Springer Singapore, Singapore, 2019.