CAREER: GaSb-based Photonic Integrated Circuits for Short- and Mid-Wave Infrared Applications

职业：用于短波和中波红外应用的 GaSb 基光子集成电路

• 批准号: 2144375
• 负责人: Shamsul Arafin
• 金额: $ 50万
• 依托单位: Ohio State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2022
• 资助国家: 美国
• 起止时间: 2022-02-15 至 2027-01-31
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2144375&HistoricalAwards=false
• 关键词: CAREER; GaSb; based; Photonic; Integrated

Photonic integrated circuits (PICs) based on a semiconductor made of antimony and gallium (often referred to as “antimonide”) with monolithically-integrated active and passive components that operate in the extended short- and mid-wave infrared wavelength regime are currently of significant research interest due to a wide range of emerging applications, including chemical sensing, industrial process control, and non-invasive medical diagnostics. This wavelength regime of the electromagnetic spectrum is important because it contains a number of spectral features such as strong overtones and combination molecular absorption bands in gas- and liquid-phase molecules for sensing applications. This eye-safe spectral regime also has an atmospheric transmission window, which makes it suitable for LiDAR/remote sensing applications. This Faculty Early Career Development (CAREER) project will develop the first non-telecom photonic IC platform based on the antimonide material system. The scientific insights and technological advances stemming from the research will also broadly impact the field of photonics by enabling operation in this underdeveloped spectral region. Since the research topic will cross different disciplines of science and engineering, such as optics, materials science, electrical engineering, physics, and chemistry, it offers a range of potential, hands-on learning activities that will engage students of varying backgrounds. In addition to high impact research advancement, this project will support interdisciplinary education activities in nanoscience and nanotechnology. The educational and outreach components are aimed at promoting interests in science, technology, engineering, and mathematics (STEM) disciplines and propagating educational opportunities by exposing K-12, undergraduate and graduate students to advancements in optics and photonics.The overarching goals of this project are to advance intellectual understanding of the low-bandgap antimonide material system for the development and demonstration of a photonic integrated circuits (PICs) technology platform in the extended short- and mid-wave infrared (S-MWIR) spectral band and to expand educational opportunities related to infrared materials science and device technology. The primary research goals of the proposed project are to (1) develop the first non-telecom photonic integrated circuits platform, (2) realize novel single-chip–based widely tunable lasers and other PIC components with an emission wavelength range of 2.2-3.4 μm and finally (3) demonstrate highly-integrated widely tunable sensing PICs. This integrated photonic demonstration will prove feasibility for future, on-chip, low-cost, compact, robust, and energy-efficient photonic subsystems that will enable a wide range of practical applications. The work performed within this project will generate new fundamental knowledge related to the GaSb material system and build innovations at the photonic components- as well as -IC levels. To establish such a monolithic platform, widely-tunable semiconductor lasers, photodetectors, low-loss waveguides and 1 × 2 optical splitters in the wavelength range of 2.2-3.4 µm, will be designed, grown, fabricated and tested. Molecular beam epitaxy will be used for the growth of device structures. Multiple, individual SG-DBR (Sampled Grating-Distributed Bragg Reflector) lasers with tuning ranges of 150-250 nm (depending on the center emission wavelength) will be needed to cover the entire targeted range. As a result, the highly-integrated optical devices and subsystems will simultaneously improve performance and efficiency as well as help meet low size, weight, power and cost (SWaP-C) constraints for next-generation S-MWIR photonic technologies.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

光子积分电路（图片）基于由矩阵和甘露制成的半导体（通常称为“抗杀菌剂”），单层整合的活性和被动组件在扩展的短短和中波红外波长中运行，目前由于具有较广泛的化学范围，包括化学范围和工业范围。电磁光谱的这种波长状态很重要，因为它包含许多光谱特征，例如在气体和液相分子中用于敏感性应用中的强泛音和组合分子滥用波段。这种安全的光谱状态还具有一个大气变速箱窗口，使其适用于LiDAR/远程灵敏度应用。这个教师早期职业发展（职业）项目将基于抗氧化物材料系统开发第一个非电气光子IC平台。研究源于研究的科学见解和技术进步也将通过在这个欠发达的光谱区域实现运行来广泛影响光子学领域。由于研究主题将跨越科学和工程学的不同学科，例如光学，材料科学，电气工程，物理和化学，它提供了一系列潜在的动手学习活动，这些活动将吸引背景不同的学生。除了高影响研究进步外，该项目还将支持纳米科学和纳米技术的跨学科教育活动。 The educational and outreach components are aimed at promoting interests in science, technology, engineering, and mathematics (STEM) disciplines and propagating educational opportunities by exposing K-12, undergraduate and graduate students to advancements in optics and photonics.The overarching goals of this project are to advance Intellectual understanding of the low-bandgap antimonide material system for the development and demonstration of a photonic integrated circuits (PICs) technology platform在扩展的短波和中波红外（S-MWIR）光谱频段中，并扩大了与基础设施科学和设备技术相关的教育机会。拟议项目的主要研究目标是（1）开发第一个非TELECOM光子集成电路平台，（2）实现新型的单芯片基于可调节的激光器和其他PIC组件，其发射波长范围为2.2-3.4μm，最后（3）表现出高度集成的广泛可调节的传感绘制。这种集成的光子演示将证明对未来，片，低成本，紧凑，健壮和节能光子子系统的可行性，这将实现广泛的实际应用。该项目中执行的工作将产生与煤气材料系统有关的新基本知识，并在光子组件和-IC级别上建立创新。为了建立这样的整体平台，将在2.2-3.4 µm的波长范围内设计，生长，制造和测试，在波长为2.2-3.4 µm的波长范围内，宽可调的半导体激光器，光电遗传学，低损耗波导和1×2光学拆分器。分子束发作将用于设备结构的生长。多个单独的SG-DBR（采样）光栅分布的Bragg反射器）激光器的调音范围为150-250 nm（取决于中心发射波长），以覆盖整个目标范围。结果，高度集成的光学设备和子系统将简单地提高性能和效率，并有助于满足下一代S-MWIR光子技术技术的尺寸，重量，功率和成本（SWAP-C）的限制。该奖项反映了NSF的法规任务，并被认为是通过基金会的知识优点和广泛的评估来评估的，并被认为是值得通过评估的支持。

项目成果

Towards GaSb-Based Monolithically Integrated Widely-Tunable Lasers for Extended Short- and Mid-Wave Infrared Wavelengths

面向 GaSb 基单片集成宽可调激光器，用于扩展短波和中波红外波长

• DOI: 10.1109/jqe.2023.3236395
• 发表时间: 2023
• 期刊: IEEE Journal of Quantum Electronics
• 影响因子: 2.5
• 作者: You, Weicheng;Dwivedi, Sarvagya;Faruque, Imad I.;John, Demis D.;McFadden, Anthony P.;Palmstrom, Christopher J.;Coldren, Larry A.;Arafin, Shamsul
• 通讯作者: Arafin, Shamsul

Design of GaSb-based monolithic passive photonic devices at wavelengths above 2 µm

波长超过 2 µm 的 GaSb 基单片无源光子器件的设计

• DOI: 10.1088/2515-7647/ace509
• 发表时间: 2023
• 期刊: Journal of Physics: Photonics
• 作者: Sumon, Md Saiful;Sankar, Shrivatch;You, Weicheng;Faruque, Imad I;Dwivedi, Sarvagya;Arafin, Shamsul
• 通讯作者: Arafin, Shamsul