Short-gate GaN HEMTs for mm-wave integrated circuits

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There is an explosion of demand for high frequency circuits able to perform efficiently at mm-wave, driven by applications such as automotive radar, imaging, 5G, security. From a device manufacturing point of view, higher frequency of operation requires to target aggressive gate length, being careful to address simultaneously other specifications avoiding to jeopardize other figures of merit. This project, supported by NWF, will target the fabrication, characterization, and optimization of GaN HEMTs with <100nm gate length for W- and D- band applications. The candidate will use both the University and company premises to optimize the process steps to achieve the needed process accuracy and repeatability. Advanced characterization will be used to assess the progress of the technique developed.