Short-gate GaN HEMTs for mm-wave integrated circuits

用于毫米波集成电路的短栅 GaN HEMT

• 批准号: 2429191
• 金额: --
• 依托单位: CARDIFF UNIVERSITY
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2020
• 资助国家: 英国
• 起止时间: 2020 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2429191
• 关键词: Short; gate; GaN; HEMTs; mm

There is an explosion of demand for high frequency circuits able to perform efficiently at mm-wave, driven by applications such as automotive radar, imaging, 5G, security. From a device manufacturing point of view, higher frequency of operation requires to target aggressive gate length, being careful to address simultaneously other specifications avoiding to jeopardize other figures of merit. This project, supported by NWF, will target the fabrication, characterization, and optimization of GaN HEMTs with <100nm gate length for W- and D- band applications. The candidate will use both the University and company premises to optimize the process steps to achieve the needed process accuracy and repeatability. Advanced characterization will be used to assess the progress of the technique developed.

在汽车雷达、成像、5G、安全等应用的推动下，对能够在毫米波下高效运行的高频电路的需求呈爆炸式增长。从器件制造的角度来看，更高的工作频率需要以积极的栅极长度为目标，同时小心地解决其他规范，避免危及其他品质因数。该项目由NWF支持，将针对W和D波段应用的栅极长度<100 nm的GaN HEMT的制造、表征和优化。候选人将使用大学和公司的场地来优化工艺步骤，以达到所需的工艺精度和可重复性。先进的表征将用于评估所开发技术的进展。