Short-gate GaN HEMTs for mm-wave integrated circuits

在汽车雷达、成像、5G、安防等应用的推动下，对能够在毫米波高效运行的高频电路的需求呈爆炸式增长。从器件制造的角度来看，更高的工作频率要求以侵略性栅极长度为目标，同时要小心地同时满足其他规格，避免危及其他品质因数。该项目由NWF支持，将致力于W波段和D波段应用的栅长为&lt；100 nm的GaN HEMTs的制备、表征和优化。应聘者将利用大学和公司的办公场所来优化工艺步骤，以达到所需的工艺精度和可重复性。先进的表征将被用来评估所开发技术的进展。

There is an explosion of demand for high frequency circuits able to perform efficiently at mm-wave, driven by applications such as automotive radar, imaging, 5G, security. From a device manufacturing point of view, higher frequency of operation requires to target aggressive gate length, being careful to address simultaneously other specifications avoiding to jeopardize other figures of merit. This project, supported by NWF, will target the fabrication, characterization, and optimization of GaN HEMTs with <100nm gate length for W- and D- band applications. The candidate will use both the University and company premises to optimize the process steps to achieve the needed process accuracy and repeatability. Advanced characterization will be used to assess the progress of the technique developed.