Ion implantation into semiconductors: studying a new manufacturing technique

本项目将使用原子探针断层扫描(APT)研究离子注入到半导体中，采用一种基于离子液体光束的新制造和表征技术。离子液体是没有中间溶剂的阳离子和阴离子的混合物。离子液体离子源(ILIS)是一种液体覆盖锋利的针头的装置。针受到电场的作用以产生离子束。产生的束流可以用于处理材料。ILIS提供了大量的离子化学，包括有机分子、简单的原子卤素和重氟化物种。由于束中氟化物种的反应性，ILIS辐照后硅的快速刻蚀已被证明[1]。ILI可用于制造(例如微电子制造)和材料的高级表征。ILIS光束可以聚焦并用于纳米级的材料研磨，从而实现层析成像或制备用于透射电子显微镜的样品。ILIS也可以用来进行二次离子质谱学。这个项目将研究ILIS离子注入半导体，如果ILIS用于制造或表征，应该理解这一点。APT允许以亚纳米分辨率对材料进行三维分析，以前曾用于研究离子注入[2]。APT将被用来分析ILIS辐照样品的亚表面化学成分。商业上可用的硅柱将用各种ILIS梁进行处理。然后，这些柱子将被塑造成使用聚焦离子束的原子探测器，并将使用APT来确定离子束中包含的化学物质的注入深度。这项工作应该进一步发展APT作为一种植入表征技术。SCI。泰克诺。B 28(2010年)L25[2]K Eder等，超微显微镜228(2021年)113334

This project will use atom probe tomography (APT) to study ion implantation into semiconductors with a new manufacturing and characterisation technique based on ionic liquid beams.Ionic liquids are mixtures of cations and anions without an intervening solvent. An Ionic Liquid Ion Source (ILIS) is a device in which the liquid covers a sharpened needle. The needle is subjected to electric fields to produce an ion beam. The resulting beam can be used to treat materials.ILIS provide a large variety of ion chemistries, including organic molecules, simple atomic halogens, and heavily fluorinated species. Fast etching of silicon has been demonstrated after ILIS irradiation, thanks to the reactivity of fluorinated species in the beam [1]. ILIS can be used for manufacturing (e.g. microelectronics fabrication) and in advanced characterisation of materials. The ILIS beam could be focused and used to mill materials at the nanoscale, enabling tomography or the preparation of samples for transmission electron microscopy. ILIS could also be used to perform secondary ion mass spectrometry.This project will study the implantation of ILIS ions into semiconductors, which should be understood if ILIS is used in manufacturing or characterisation. APT allows analysis of materials in three dimensions with sub-nanometer resolution, and has been used previously to study ion implantation [2]. APT will be used to profile the sub-surface chemical composition of ILIS-irradiated samples. Commercially available silicon pillars will be treated with a variety of ILIS beams. The pillars will then be shaped into atom probes using focused ion beam, and APT will be used to determine the implantation depths of chemical species contained in the ion beam. This work should further develop APT as an implantation characterisation technique.[1] C Perez-Martinez et al., J. Vac. Sci. Technol. B 28 (2010) L25[2] K Eder et al., Ultramicroscopy 228 (2021) 113334