Carrier Mobility Distributions: New Insights into Fundamental Electronic Transport in Advanced Semiconductor Structures

了解新兴和未来半导体器件结构中的载流子迁移率分布，可以对其基本电子特性和传输过程以及限制器件性能的机制产生前所未有的见解。该项目旨在通过采用新颖的实验技术和高分辨率迁移谱分析方法，结合先进的电子输运物理数值模拟，开创载流子迁移率分布的系统研究。该项目旨在证明新的知识和理解可以用于优化和增强新兴和未来的半导体技术。

Understanding carrier mobility distributions in emerging and future semiconductor device structures can yield unprecedented insights into their fundamental electronic properties and transport processes, and into the mechanisms limiting device performance. This project aims to pioneer the systematic investigation of carrier mobility distributions by employing novel experimental techniques and high-resolution mobility spectrum analysis methodologies, combined with advanced numerical simulation of electronic transport physics. The project will aim to demonstrate that the new knowledge and understanding can be employed in the optimisation and enhancement of emerging and future semiconductor technologies.