Defect engineering in molecular beam epitaxy-grown mercury cadmium telluride
Defect engineering in molecular beam epitaxy-grown mercury cadmium telluride
批准号:
LP170100088
负责人:
Prof Lorenzo Faraone
金额:
$34.32万
依托单位国家:
澳大利亚
项目类别:
Linkage Projects
财政年份:
2018
资助国家:
澳大利亚
项目状态:
已结题
起止时间:
2018-04-01 至 2021-03-31
中文摘要
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英文摘要
This project aims to develop high quality mercury cadmium telluride (HgCdTe) materials with lower defect density and lower background doping levels. This will enable future, high-performance, lower-cost infrared sensors with the unique features of higher yield, larger array size and higher operating temperature. The project will generate new science and technologies on defect engineering in the epitaxial growth of semiconducting HgCdTe on cadmium zinc telluride (CdZnTe) substrates. This will contribute to the development of core Australian industry sectors such as defence, environmental monitoring, medical imaging, earth remote sensing, mining, and oil and gas.
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