Investigation of 1/f noise mechanisms in HgCdTe heterostructure IR photodiodes

由于任何光子探测器的性能都是由其信噪比决定的，因此减少噪声产生机制对于改善信号同样重要。在这个项目中，我们建议首次使用最近开发的二维分析程序对碲化镉探测器中的噪声产生机制进行全面分析。该项目的主要目的是证明HgCdTe光电探测器中的1/f噪声是由探测器结构高电场区域的暗电流波动引起的。这项工作的主要成果将是第一个全面的二维器件模型，可以预测半导体器件中的1/f噪声。

Since the performance of any photon detector is defined by its signal to noise ratio, the reduction of noise generating mechanisms is equally important to improvement of the signal. In this project we propose to carry out, for the first time, a comprehensive analysis of noise generating mechanisms in HgCdTe detectors using recently developed, two-dimensional analysis procedure. The main objective of this project is to prove that 1/f noise in HgCdTe photodetectors is caused by dark current fluctuations in the high electric field regions of the detector structure. The primary outcome of this work will be the first comprehensive two-dimensional device model that can predict 1/f noise in a semiconductor device.