Quantum-dot semiconductor waveguide gain materials and their applications

在1550 nm附近的高质量和高密度InAs基自组装量子点（QD）半导体增益材料的技术实现提供了许多新的可能性。与传统的基于体/量子阱（QW）的半导体或掺杂稀土的光纤增益材料相比，基于QD的波导增益材料的优点在于：宽得多的光谱带宽、低激光阈值电流密度、高温稳定性、大大降低的线宽增强因子、小功耗、大饱和输出功率、高速调制时的低啁啾行为更好的背反射不敏感性，独立的多波长和无图案放大。本研究的意义在于利用量子点的上述特性/优点来开发新型的量子点基半导体波导器件及其应用。

The technological realization of high-quality and high-density InAs-based self-assembled quantum-dot (QD) semiconductor gain material around 1550 nm offers many new possibilities. As compared with the conventional bulk / quantum-well (QW) based semiconductor or rare-earth-doped fiber gain materials, the advantages of the QD-based waveguide gain materials are: much broader spectral bandwidths, low lasing threshold current densities, high temperature stability, strongly reduced linewidth enhancement factor, small power consumption, large saturated output power, low chirp behaviors at high speed modulation, much better back-reflection insensitivity, independent multi-wavelength and pattern-free amplification. The significance of this proposal is that utilizing the above mentioned special properties /advantages to develop novel QD-based semiconductor waveguide devices and their applications.