III-V nitrides for advanced device applications

用于先进设备应用的III-V氮化物。我们寻求开发用于现代微波应用的全澳大利亚氮化物器件能力所需的基础科学和技术。将在材料特性的基本理解方面取得重大进展，以满足关键技术需求。我们将建立一种准确分析氮化镓中氧和氢的创新程序。阴极发光、拉曼和吸收研究，结合元素分析方法，将被用来解决一系列重要的技术问题，如GaN的掺杂效率、补偿和接触加工技术。

III-V nitrides for advanced device applications. We seek to develop the fundamental science and technology necessary for an all-Australian nitride device capability for modern microwave applications. Significant advances in basic understanding of material properties will be made to meet critical technology needs. We will establish an innovative procedure for accurate analysis of oxygen and hydrogen in gallium nitride. Cathodoluminescence, Raman and absorption studies, combined with methods of elemental analysis will be used to resolve a wide range of technologically important problems such as the efficiency of doping, compensation and contact processing technologies in GaN.