MRI: Development of A New High Temperature Source Metalorganic Chemical Vapor Deposition System (HTS-MOCVD) for Next Generation IIIA/B-Nitrides

MRI：开发用于下一代 IIIA/B 氮化物的新型高温源金属有机化学气相沉积系统 (HTS-MOCVD)

• 批准号: 2216107
• 负责人: Asif Khan
• 金额: $ 36.42万
• 依托单位: University of South Carolina at Columbia
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2022
• 资助国家: 美国
• 起止时间: 2022-09-01 至 2024-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2216107&HistoricalAwards=false
• 关键词: MRI; Development; New; Temperature; Source

Abstract Title: Novel High Temperature Research Instrument to fabricate next generation semiconductors for Power Electronics for electric vehicles and future electric grid.Group III-Nitrides are semiconductors beyond silicon that enable unique electronic and optical devices for power chargers for laptops, cell phones and other consumer electronics, and the electronics for hybrid and electric vehicles (HEV’s). These semiconductors are also used to manufacture the green, blue, and white light emitting diodes (LED’s) for high efficiency lighting and displays for which the 2014 Nobel Prize in physics was awarded. The III-Nitride semiconductors are also at the core of ultraviolet LEDs for disinfection and air-water purification. These unique and important semiconductors materials are produced using a high temperature growth process called Metalorganic Chemical Vapor Deposition (MOCVD) that is carried out in a unique high temperature equipment to allow high quality crystalline materials with a very high purity. It has been proposed that the incorporation of transition metals, such as Titanium and Scandium can enhance the performance of these semiconductor materials for power electronics by increasing the piezoelectrically produced electrical charge by ~2-10 times. This higher charge can will enable higher current levels in HEV’s. The challenge here is to produce high quality materials, which in turn require even higher temperature growth and chemical processes, for which there are currently no commercial tools available. In this proposal, we will develop both the hardware tools, and the chemical processes, and measurement techniques required to demonstrate the potential for this new high temperature, high current, high voltage technology. This Track-I NSF MRI proposal aims to develop a New High Temperature Source-Metalorganic Chemical Vapor Deposition System (HTS-MOCVD) for depositing the emerging IIIB-Transition- Metal Nitrides (such as ScN), and conventional IIIA-Nitrides (GaN-AlN-InN) in a single growth reactor. The III-B nitrides have very high piezo-pyroelectric coefficients making them ideal for high performance sensors. Moreover, their heterojunctions with III-A nitrides can potentially yield power electronic and UVB-C optoelectronic devices with performance level well above those of current devices. Our system design will have several innovative features such as a new high temperature source design, and a new precursor injector design. This new injector design will in essence allow source injection like in conventional MOCVD reactors very close to the growth susceptor. This nclose injection mode, and the high temperature source, will enable increased precursor injection efficiency and thus growth rates for ScN compatible with those of AlxGa1-xN. The close to susceptor/substrate injection will also lead to a significant reduction in the adduct formation thereby simultaneously improving the growth quality with a growth rate much higher than conventional MOCVD systems. Thus, our unique system design will allow the growth of thicker buffer regions and the active regions (typically much thinner) of the device structures simultaneously in the same system. It will also be ideal for depositing AlxGa1-xN/AlySc1-yN heterojunctions and quantum wells to explore their properties. MOCVD systems with our high temperature source and the dual injector design are commercially not available.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

题目：新型高温研究仪器，用于制造用于电动汽车和未来电网的下一代电力电子半导体。iii类氮化物是硅以外的半导体，可用于笔记本电脑、手机和其他消费电子产品的电源充电器以及混合动力和电动汽车（HEV）的电子产品的独特电子和光学器件。这些半导体还用于制造绿色、蓝色和白色发光二极管（LED），用于高效照明和显示器，2014年诺贝尔物理学奖就是因这些半导体而获得的。iii -氮化物半导体也是用于消毒和空气水净化的紫外led的核心。这些独特而重要的半导体材料是使用称为金属有机化学气相沉积（MOCVD）的高温生长工艺生产的，该工艺在独特的高温设备中进行，从而使高质量的晶体材料具有非常高的纯度。有人提出，过渡金属，如钛和钪的掺入可以通过将压电产生的电荷增加~2-10倍来提高这些用于电力电子的半导体材料的性能。这种更高的电荷可以使HEV的电流水平更高。这里的挑战是生产高质量的材料，这反过来需要更高的温度生长和化学过程，目前还没有可用的商业工具。在本提案中，我们将开发硬件工具，化学过程和测量技术，以展示这种新的高温，大电流，高电压技术的潜力。这项Track-I NSF MRI提案旨在开发一种新的高温源-金属有机化学气相沉积系统（HTS-MOCVD），用于在单个生长反应器中沉积新兴的iiib -过渡-金属氮化物（如ScN）和传统的iiia -氮化物（GaN-AlN-InN）。III-B氮化物具有非常高的压电热释电系数，使其成为高性能传感器的理想选择。此外，它们与III-A氮化物的异质结可以潜在地产生功率电子和UVB-C光电器件，其性能水平远高于当前器件。我们的系统设计将具有几个创新功能，例如新的高温源设计和新的前驱物注入器设计。这种新的喷射器设计将在本质上允许源注入，就像传统的MOCVD反应器一样，非常接近生长受体。这种近距离的注入模式和高温源将提高前驱体注入效率，从而提高与AlxGa1-xN相容的ScN的生长速度。接近感受器/衬底的注入也将导致加合物形成的显著减少，从而同时提高生长质量，其生长速度远高于传统的MOCVD系统。因此，我们独特的系统设计将允许在同一系统中同时生长较厚的缓冲区域和器件结构的有源区域（通常更薄）。它也将是沉积AlxGa1-xN/AlySc1-yN异质结和量子阱以探索其性质的理想选择。具有我们的高温源和双喷油器设计的MOCVD系统在商业上是不可用的。该奖项反映了美国国家科学基金会的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。