Characterization of nanoscale materials and devices for CMOS, bio-sensors, microfluidic and Lab-on-chip applications

在半导体工业中，芯片速度的提高依赖于基本晶体管尺寸的减小。当水平器件尺寸小于0.1um时，一些垂直器件尺寸减小到只有几个原子层。在这些维度上，标准标度定律失效。一种解决方案是在硅芯片制造过程中引入新材料。提出的研究承担了其中一些材料的制造，测量和分析。这项研究将包括硅基技术与其他纳米电子材料的集成，用于非传统的纳米电子设备，如集成微传感器和分子操作，用于生物和/或医疗设施的微流体。

In the semiconductor industry, the increased chip speed has relied upon reduction of basic transistor size. As horizontal device dimensions become less than 0.1um, some vertical device dimensions are reduced to only a few atomic layers. At these dimensions the standard scaling laws fail. One solution would be to introduce new materials into the silicon chip fabrication process. The proposed research undertakes the fabrication, measurement and analysis of some of these materials. This research will include the integration of silicon-based technologies with other nano-electronic materials for applications in the non-traditional nano-electronic devices such as integrated micro-sensors andh molecular manipulation thorough microfluidics for biological and/or medical facilities.