Infrared structural characterization of controlled-growth silicon oxide surfaces

原子层沉积是一种很有前途的技术，用于材料的精确分子水平组装。它提供 创造可控成分、厚度、协调和结合的结构的可能性。该地区 在半导体器件制造中，优化各种剂量和清洗的时间是至关重要的。 步骤，因为需要许多循环以产生厚的多层结构。为此， 能够在原位表征生长界面的结构是非常有价值的。这项建议 试图表征各种碱和表面羟基之间的相互作用， 连续的二氧化硅层。线性和非线性振动光谱的组合提供了极端的 对亚单层覆盖的灵敏度，从而监测碱基之间的分子水平相互作用 引入气相和表面化学官能团。本建议的第二个目的是 探索在原子层沉积内部以真实的时间执行其中一些测量的可能性 系统

Atomic layer deposition is a promising technique for precise molecular-level assembly of materials. It offers the possibility to create structures of controlled composition, thickness, coordination, and bonding. In the area of semiconductor device fabrication, it is essential to optimize the timing of the various dosing and purging steps, as many cycles are required in order to create thick multi-layer structures. To this end, techniques that are able to characterize the structure of the growing interfaces in situ are extremely valuable. This proposal seeks to characterize the interaction between various bases and surface hydroxyl groups in the formation of successive silica layers. A combination of linear and nonlinear vibrational spectroscopy offers extreme sensitivity to sub-monolayer coverages, thereby monitoring the molecular-level interactions between the bases introduced in the vapour phase and the surface chemical functional groups. A second aim of this proposal is to explore the possibility of performing some of these measurements in real time inside an atomic layer deposition system.