Micrometer sized LEDs for display applications

基于GaAsP/GaAs的微米尺寸发光二极管（µ-LED）是下一代高分辨率、高效率显示器的一种非常有前途的技术，因为它比现有产品具有显著的优势-其亮度水平可以比液晶器件（LCD）和有机发光二极管（OLED）显示器高几个数量级。它具有低电压要求，并且适合于混合互补金属氧化物半导体（CMOS）和集成电路（IC）组装。然而，在一个关键问题得到有效解决之前，这项技术无法商业化-当器件尺寸缩小到微米范围（3-10 µm）时，观察到的效率显著下降。在这个项目中，我们将与我们的行业合作伙伴- VueReal Technologies Inc.密切合作，一家总部位于滑铁卢的高科技公司，探索和开发一种新的技术方法，可以通过最大限度地减少通过干蚀刻梅萨侧壁上的分流路径的漏电流来提高µ-LED的光发射效率。本研究的目的为：1）开发一种最佳化的乾式及/或湿式GaAsP/GaAs蚀刻制程，以减少侧壁缺陷/杂质; 2）开发介电质钝化薄膜，以钝化在乾式蚀刻制程中所产生的侧壁陷阱中心; 3）制作红色微发光二极管，以达到最佳的元件效能，4）开发一种新的分离和转移方法，以将红色µ-LED器件与IC背板基板集成。该项目还将为高素质人员（HQP）提供一个极好的机会，以获得设备制造和表征以及显示技术的实践经验。该合作项目将为行业合作伙伴的设备研发活动提供滑铁卢大学急需的专业知识和设施。预计从该项目衍生的新型显示技术/原型可以由行业合作伙伴商业化，这将在这个快速增长的市场中为行业合作伙伴建立领导地位。

GaAsP/GaAs based micrometer-sized light emitting diode (µ-LED) is emerging as a very promising technology for next generation high-resolution, high-efficiency displays because of its significant advantages over the existing products - its luminance level can be several orders of magnitude higher than liquid-crystal-device (LCD) and organic light-emitting diode (OLED) displays. It has low voltage requirements and is amenable to hybrid complementary metal-oxide semiconductor (CMOS) and integrated-circuit (IC) assembly. However, this technology can't be commercialized until one critical issue can be effectively addressed - the significant efficiency droop observed when the device size shrinks to micrometer range (3-10 µm). In this project, we will work closely with our industry partner - VueReal Technologies Inc., a Waterloo-based high-tech company, to explore and develop a new technical approach that can enhance the optical emission efficiency of µ-LEDs by minimizing the leakage current through the shunt paths over dry-etched mesa sidewalls. The research objectives are 1) To develop an optimized dry and/or wet GaAsP/GaAs etching process for minimizing sidewall defects/impurities, 2) To develop dielectric passivation thin film to passivate sidewall trap centers created during the dry etch process, 3) To fabricate red µ-LED devices for achieving optimum device performance, 4) To develop a new detaching and transferring approach to integrate the red µ-LED devices with an IC backplane substrate. This project will also provide an excellent opportunity for highly qualified personal (HQP) to gain hands-on experience with device fabrication and characterization, as well as display technologies. This collaboration project will provide the much urgently-needed expertise and facilities at the University of Waterloo to the industry partner for their device R&D activities. It is expected that novel display techniques/prototypes derived from this project can be commercialized by the industry partner, which would establish a leadership position for the industry partner within this fast-growing market.