Transmission Helium Ion Microscopy
Transmission Helium Ion Microscopy
批准号:
RGPIN-2019-05086
负责人:
Kavanagh, Karen
金额:
$4.44万
依托单位:
依托单位国家:
加拿大
项目类别:
Discovery Grants Program - Individual
财政年份:
2021
资助国家:
加拿大
项目状态:
已结题
起止时间:
2021-01-01 至 2022-12-31
中文摘要
电子系统继续朝着尺寸更小、功能更强的方向发展,同时降低了成本和电力需求。一维器件几何、原子薄、二维、材料和不寻常的半导体都进入了这一领域。单电子或单光子探测器、发射体和开关的报道越来越多。根据这些新设备的量子大小,已经开发出一种新的信息比特,称为量子比特。这些耐人寻味的新能力不仅在科学上令人着迷,而且通过在新颖的电子设计中的应用而使新的行业成为可能。电子学中的每一次发展都是与新型制造、成像和表征能力并行发生的,或者是因为新型制造、成像和表征能力的缘故。电子显微镜稳步提高了我们在原子尺度上“看到”复杂结构的能力。通过高能氦离子束进行原子轮廓分析是最古老的表征技术之一(卢瑟福背散射),在计算机硅芯片的早期开发期间是一个关键工具,并继续朝着更大面积处理的方向发展。用于几乎所有元素的聚焦离子束的液态金属源已经彻底改变了精细研磨和图案化工业。氦离子的单原子尖端源与稳定的聚焦柱相结合,为新的表征提供了新的机会。这项研究计划的目的是建立透射式氦离子显微镜(THIM),用于表征非常薄材料的原子组成和厚度。氦离子源从一个很小的体积(一个钨原子)发射离子。加速的氦原子很容易在固体中的原子之间穿行,但由于静电力的作用,氦原子的速度开始迅速减慢。引导氦离子通过原子行的能力(沟道作用)将被应用于根据散射强度来量化层厚度和原子组成。污染物和杂质的存在可以通过它们对光束的能量和相位的影响来检测。它们通过薄样本后的检测可以告诉我们关于样本的很多信息。因此,需要更好的相机来进行测试。我们将与加拿大工业界合作,开发未来的产品和制造机会。Thim在材料表征方面的应用将使加拿大和全球电子行业受益,因为他们需要更小和更高效的有源器件特性。这项研究可能会使对激光、发光二极管和太阳能电池应用至关重要的电气特性进行更高分辨率的检测。对这里提出的新的先进技术人员的培训将帮助加拿大社会在理解和设计下一代关键电子材料和设备方面与全球社会保持一致或领先于全球社会。我们设计新解决方案和创造新设备的能力将提高我们的生活质量。
英文摘要
Electronic systems continue to evolve towards smaller sizes, with increased capabilities, while reducing cost and power requirements. One-dimensional device geometries, atomically-thin, two-dimensional, materials, and unusual semiconductors have entered the field. Single electron or photon detectors, emitters, and switches are increasingly reported. A new information bit has developed called a qubit resulting from the quantum size of these new devices. These intriguing new capabilities are not only scientifically fascinating, but are enabling new industries by their application in novel electronic designs. Every development in electronics has occurred in parallel with, or because of, new types of fabrication, imaging and characterization capabilities. Electron microscopy have steadily improved our capabilities for "seeing" complex structures at the atomic scale. Atomic profiling via high-energy helium ion beams, one of the oldest characterization techniques (Rutherford backscattering), was a pivotal tool during the early development of silicon chips for computers and continues to evolve for larger area processing. Liquid metal sources for focussed ion beams of almost any element have revolutionized the fine milling and patterning industry. A single atom tip source for helium ions, combined with a stable focussing column, is providing new opportunities for novel characterization. The aim of this research program is to establish Transmission Helium Ion Microscopy (THIM), for the characterization of the atomic composition and thickness of very thin materials. The HIM ion source emits ions from a tiny volume (one tungsten atom). Accelerated helium atoms easily pass in between the atoms in a solid but begin to slow down rapidly from electrostatic forces. The ability to steer a He ion via rows of atoms (channeling) will be applied to quantify layer thickness and atomic composition from scattering intensities. The presence of contaminants and impurities may be detected by their effects on the energy and phase of the beam. Their detection after passing through a thin sample can tell us much about the sample. To carry out THIM better cameras will be needed. We will be working with Canadian industry towards future products and manufacturing opportunities. The application of THIM to materials characterization will benefit the Canadian and global electronics industry in general through their need for smaller and more efficient active device properties. The research will likely enable higher resolution detection of electrical properties critical to lasers, light emitting diodes and solar cell applications. The training of personnel in the new advanced techniques proposed here will help Canadian society stay with or ahead of the global community in understanding and designing the next generation of critical electronic materials and devices. Our ability to devise new solutions and create new devices will improve our quality of life.
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Transmission Helium Ion Microscopy
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批准号:RGPIN-2019-05086
-
项目类别:Discovery Grants Program - Individual
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资助金额:$4.44万
-
财政年份:2022
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负责人:Kavanagh, Karen
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依托单位:
Development of a Negative He ion source with Non-Metallic Charge Exchange
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批准号:567136-2021
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项目类别:Alliance Grants
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资助金额:$2.19万
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财政年份:2021
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负责人:Kavanagh, Karen
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依托单位:
Transmission Helium Ion Microscopy
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批准号:RGPIN-2019-05086
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项目类别:Discovery Grants Program - Individual
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资助金额:$4.44万
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财政年份:2020
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负责人:Kavanagh, Karen
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依托单位:
Transmission Helium Ion Microscopy
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批准号:RGPAS-2019-00059
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项目类别:Discovery Grants Program - Accelerator Supplements
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资助金额:$5.83万
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财政年份:2020
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负责人:Kavanagh, Karen
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依托单位:
Transmission Helium Ion Microscopy
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批准号:RGPIN-2019-05086
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项目类别:Discovery Grants Program - Individual
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资助金额:$4.44万
-
财政年份:2019
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负责人:Kavanagh, Karen
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依托单位:
Transmission Helium Ion Microscopy
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批准号:RGPAS-2019-00059
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项目类别:Discovery Grants Program - Accelerator Supplements
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资助金额:$2.91万
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财政年份:2019
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负责人:Kavanagh, Karen
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依托单位:
Graphene Composite Conductivity**
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批准号:537160-2018
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项目类别:Engage Grants Program
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资助金额:$1.82万
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财政年份:2018
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负责人:Kavanagh, Karen
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依托单位:
Picometer Probes for Defects in Nanostructures
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批准号:RGPIN-2014-04684
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项目类别:Discovery Grants Program - Individual
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资助金额:$4.3万
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财政年份:2018
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负责人:Kavanagh, Karen
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依托单位:
Picometer Probes for Defects in Nanostructures
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批准号:RGPIN-2014-04684
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项目类别:Discovery Grants Program - Individual
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资助金额:$4.3万
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财政年份:2017
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负责人:Kavanagh, Karen
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依托单位:
Amorphous selenium helium ion camera
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批准号:514539-2017
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项目类别:Engage Grants Program
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资助金额:$1.56万
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财政年份:2017
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负责人:Kavanagh, Karen
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依托单位:
Picometer Probes for Defects in Nanostructures
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批准号:RGPIN-2014-04684
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项目类别:Discovery Grants Program - Individual
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资助金额:$4.3万
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财政年份:2016
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负责人:Kavanagh, Karen
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依托单位:
Picometer Probes for Defects in Nanostructures
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批准号:RGPIN-2014-04684
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项目类别:Discovery Grants Program - Individual
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资助金额:$4.3万
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财政年份:2015
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负责人:Kavanagh, Karen
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依托单位:
Mapping IC electrostatics
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批准号:490990-2015
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项目类别:Engage Grants Program
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资助金额:$1.82万
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财政年份:2015
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负责人:Kavanagh, Karen
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依托单位:
Graphene from hydrothermal graphite
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批准号:474781-2014
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项目类别:Engage Grants Program
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资助金额:$1.82万
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财政年份:2014
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负责人:Kavanagh, Karen
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依托单位:
Picometer Probes for Defects in Nanostructures
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批准号:RGPIN-2014-04684
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项目类别:Discovery Grants Program - Individual
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资助金额:$4.3万
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财政年份:2014
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负责人:Kavanagh, Karen
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依托单位:
Electrodeposited contacts to semiconductor nanostructures
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批准号:222869-2009
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项目类别:Discovery Grants Program - Individual
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资助金额:$5.9万
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财政年份:2013
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负责人:Kavanagh, Karen
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依托单位:
Fuel cell nanostructural analysis
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批准号:452003-2013
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项目类别:Engage Grants Program
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资助金额:$1.82万
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财政年份:2013
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负责人:Kavanagh, Karen
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依托单位:
Nanoparticle fingerprint removal
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批准号:451375-2013
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项目类别:Engage Grants Program
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资助金额:$1.82万
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财政年份:2013
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负责人:Kavanagh, Karen
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依托单位:
Electrodeposited contacts to semiconductor nanostructures
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批准号:222869-2009
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项目类别:Discovery Grants Program - Individual
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资助金额:$5.9万
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财政年份:2012
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负责人:Kavanagh, Karen
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依托单位:
Electrodeposited contacts to semiconductor nanostructures
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批准号:222869-2009
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项目类别:Discovery Grants Program - Individual
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资助金额:$5.9万
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财政年份:2011
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负责人:Kavanagh, Karen
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依托单位:
海外基金