Electrodeposited contacts to semiconductor nanostructures
Electrodeposited contacts to semiconductor nanostructures
批准号:
222869-2009
负责人:
Kavanagh, Karen
金额:
$5.9万
依托单位:
依托单位国家:
加拿大
项目类别:
Discovery Grants Program - Individual
财政年份:
2011
资助国家:
加拿大
项目状态:
已结题
起止时间:
2011-01-01 至 2012-12-31
中文摘要
在任何两个结构之间发现的界面通常是有趣的科学和信息传递的场所。这适用于自然界面,如细胞膜,以及人工制造的半导体界面,如光电子应用中的那些界面。手机、计算机和固态光源都依赖于电荷和/或光通过接口传输到半导体。这些系统和设备的运行效率和成本与界面属性直接相关,因此,许多基础和应用研究都集中在这一领域。随着设备数量和表征功能的不断缩小,接口问题继续变得重要。
英文摘要
The interface found between any two structures is often the location of interesting science and information transfer. This is true for natural interfaces, such as cell membranes, and artificially manufactured semiconductor interfaces, such as those found in optoelectronic applications. Cell phones, computers, and solid state light sources all rely on charge and or light transfer through interfaces to semiconductors. The efficiency and thus cost of operation of these systems and devices is directly related to the interface properties and because of this, much basic and applied research has focused on this area. With device volumes and characterization capabilities moving ever smaller, interface questions continue to be important.
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