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Electrodeposited contacts to semiconductor nanostructures

Electrodeposited contacts to semiconductor nanostructures
半导体纳米结构的电沉积接触
批准号:
222869-2009
负责人:
Kavanagh, Karen
金额:
$5.9万
依托单位:
依托单位国家:
加拿大
项目类别:
Discovery Grants Program - Individual
财政年份:
2011
资助国家:
加拿大
项目状态:
已结题
起止时间:
2011-01-01 至 2012-12-31

项目摘要

项目成果

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中文摘要
翻译
任何两个结构之间的界面往往是有趣的科学和信息传递的位置。对于自然界面(如细胞膜)和人工制造的半导体界面(如在光电应用中发现的那些)来说,这是正确的。手机、电脑和固态光源都依赖于电荷和光通过半导体接口的传输。这些系统和设备的运行效率和成本与界面特性直接相关,因此,许多基础和应用研究都集中在这一领域。随着设备体积和表征能力越来越小,接口问题仍然很重要。
英文摘要
The interface found between any two structures is often the location of interesting science and information transfer. This is true for natural interfaces, such as cell membranes, and artificially manufactured semiconductor interfaces, such as those found in optoelectronic applications. Cell phones, computers, and solid state light sources all rely on charge and or light transfer through interfaces to semiconductors. The efficiency and thus cost of operation of these systems and devices is directly related to the interface properties and because of this, much basic and applied research has focused on this area. With device volumes and characterization capabilities moving ever smaller, interface questions continue to be important.
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Transmission Helium Ion Microscopy
  • 批准号:
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  • 项目类别:
    Discovery Grants Program - Individual
  • 资助金额:
    $4.44万
  • 财政年份:
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  • 负责人:
    Kavanagh, Karen
  • 依托单位:
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  • 批准号:
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  • 项目类别:
    Discovery Grants Program - Individual
  • 资助金额:
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  • 财政年份:
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  • 负责人:
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Development of a Negative He ion source with Non-Metallic Charge Exchange
  • 批准号:
    567136-2021
  • 项目类别:
    Alliance Grants
  • 资助金额:
    $2.19万
  • 财政年份:
    2021
  • 负责人:
    Kavanagh, Karen
  • 依托单位:
Transmission Helium Ion Microscopy
  • 批准号:
    RGPIN-2019-05086
  • 项目类别:
    Discovery Grants Program - Individual
  • 资助金额:
    $4.44万
  • 财政年份:
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  • 负责人:
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  • 依托单位:
海外基金