Electrodeposited contacts to semiconductor nanostructures
Electrodeposited contacts to semiconductor nanostructures
批准号:
222869-2009
负责人:
Kavanagh, Karen
金额:
$5.9万
依托单位:
依托单位国家:
加拿大
项目类别:
Discovery Grants Program - Individual
财政年份:
2012
资助国家:
加拿大
项目状态:
已结题
起止时间:
2012-01-01 至 2013-12-31
中文摘要
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英文摘要
The interface found between any two structures is often the location of interesting science and information transfer. This is true for natural interfaces, such as cell membranes, and artificially manufactured semiconductor interfaces, such as those found in optoelectronic applications. Cell phones, computers, and solid state light sources all rely on charge and or light transfer through interfaces to semiconductors. The efficiency and thus cost of operation of these systems and devices is directly related to the interface properties and because of this, much basic and applied research has focused on this area. With device volumes and characterization capabilities moving ever smaller, interface questions continue to be important.
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