硅基Ⅳ族合金材料能带调控机制与双异质结激光器的构建

硅基光子学的实现将会使信息社会步入更为广阔和便利的光子时代，目前硅基光子学的研究已成为目前一个国际上重要的科研领域，兼容于CMOS工艺的硅基片上光源的缺失成为了限制硅基光子芯片发展的一个核心问题。本项目针对硅基光子学未来发展中对片上光源的需求，以发展适用硅基片上集成系统应用的新型激光器件为目标，立足于我们十余年硅基异质材料外延和发光器件研究的技术基础，以能带工程理论为指导，通过组分、应力调节获得直接带隙的Ⅳ族合金材料，研究其能带结构、带隙偏移以及跃迁机制等特性，分析能带结构与激光器增益、载流子寿命以及复合机制的关系和规律，提取不同结构参数与激光器性能的量化关系，设计并构建其双异质结结构的激光器件。通过优化材料制备机理和方法，获得质量优良的器件材料，优化新材料体系的关键工艺技术，实现硅基激光光源。并探索其在硅基光子学系统的中的集成和应用，为硅基光子集成芯片的发展提供理论积累和技术支持。

One of the main driving forces for silicon photonics today is silicon-based optoelec-tronic integrated circuits (OEICs), that is, integrating optoelectronic components, such as lasers,modulators, multiplexers, and detectors, into a single silicon chip. Silicon photonics has significant scientific research significance and value of the estate, the realization of silicon photonics will walk a broader and convenience photon era of the information society. An efficient silicon-based laser is the missing component for integrated silicon-based photonics. The main difficulty is that group-IV semiconductors, such as silicon (Si) and germanium(Ge), are indirect bandgap materials.As a result, group-IV semiconductors are usually poor light emitters.The realization of light emitters with a Si base is still challenging. The project focus on si-based laser for the demand of the silicon photonics chip future development, based on our more than ten years of technology accumulation on silicon epitaxy and light emitting devices of heterjunction materials research, based on energy band engineering theory, access to the direct bandgap Ⅳ group alloy material by stress and component regulation, study the band structure bandgap shift transition mechanism, analysis of the energy band structure of the laser gain the relationship between the carrier lifetime and recombination mechanisms, to extract quantitative relationship of the different structure parameters and laser performance, design and build a double heterojunction structure laser devices. Optimize the mechanism and method of materials epitaxy to access good quality device materials, optimization of the key process technology of new materials, to achieve silicon laser light source. And explore in silicon photonics systems integration and application of the theory of accumulation and technical support for the development of silicon-based photonic integrated chip.