硅基短波红外雪崩光电探测器及其阵列的基础研究

短波红外探测成像因其具有透雾、霭、烟尘能力较强，灵敏度高，对气候条件和战场环境的适应性明显等优势，在军用红外探测、医学诊断、遥感与天文观测、量子通讯等众多民用和军事领域有着广阔的应用前景。项目针对未来1-3μm短波红外探测器向大像素规模、高性能、高可靠发展的需求，以发展适用于短波红外应用的新型硅基光子探测器件为目标，创新性的采用Si/GeSn材料体系，通过研究低噪声Si/GeSn SACM结构APD器件的结构设计和优化，特别是器件结构中各层电场分布的精确控制，以期器件获得低暗电流、高倍增系数；发展满足器件需求的低位错密度的Si上GeSn外延新技术，实现材料结构中杂质掺杂浓度的优化分布以及界面控制；重点解决新材料体系下器件结构设计、材料制备及关键工艺中的核心问题，制备出性能优良的硅基短波红外雪崩光电探测器及阵列，为发展新型高性能的短波红外探测系统提供一种新的技术途径。

Short-wave infrared(SWIR) sensing and imaging ,with its powerful penetration through fog ,haze and smoke , high sensitivity ,strong adaptability for climate conditions and battlefield environment, has wide applications in civil and military field, such as military infrared detection , medical diagnosis ,remote sensing ,astronomical observations ,quantum communication and so on. This project, which adopts the Si/GeSn material system innovatively ,is aimed at developing new 1-3 μm silicon SWIR detector with lager pixel size and higher performance ,In order to develop APD device with low dark current and high multiplying coefficient ,the structure of low-noise Si/GeSn SACM APD device ,especially the precise control of electric field distribution in each layer , is studied and optimized; to meet the requirement of devices ,new technology for low dislocation density epitaxy growth of GeSn on Si is developed to realize the optimal distribution of doped impurity and interface control in material structure; this project centres on solving the core problem of device structure design, material growth , key technology in new material system to develop silicon SWIR avalanche photodetector and arrays with high performance , and offer a unique pathway for high performance SWIR detection system.