基于过渡金属硫化物场效应晶体管的高性能生物检测器研究

过渡金属硫化物由于具有直接的能带结构，二维结构，及优良的导电性，是制备高性能场效应晶体管生物传感器潜在的理想材料。虽然以二硫化钼场效应晶体管检测癌症相关的生物标记物的研究已有报道，但是进一步提高场效应晶体管的迁移率，发展有效的共价化学连接，仍然是构建高性能二硫化钼场效应晶体管生物传感器的重要挑战。本项目拟通过半导体-介电层的界面调控，在粗糙基底表面通过应力工程提高器件的迁移率，利用硫金键在过渡金属硫化物表面自组装金纳米粒子作为连接桥梁，构建特异性生物传感器。发展在疾病诊断治疗、药物测试等领域应用的新的高性能场效应晶体管生物传感器技术平台。

Transition metal dichalcogenides (TMDs) have become promising potential candidates for high-performance filed-effect transistor (FET)-based biosensors due to their natural bandgap structure, two-dimensional property and high conductivity. Several biosensors based on molybdenum disulfide (MoS2)-FETs have been developed to detect cancer-related biomarkers. However, further enhancing the FET mobility and developing effective covalent linker chemistry are still challenging to build up high-performance biosensors. In this project, strain engineering on rough substrates is applied to improve the device mobility by tuning the interface between dielectric and semiconductor. Self-assembled gold nanoparticles on the TMD surface via Au-S bonds as the linker to fabricate specific biosensors. TMD-based FETs can be used as the platform in developing high-performance biosensors for potential applications in clinical diagnosis and practical pharmaceutical industry. The results will show applications.