Light response characteristics of organic thin-film transistors with and without a P(MMA–GMA) modification layer
Light response characteristics of organic thin-film transistors with and without a P(MMA–GMA) modification layer
复制标题
具有和不具有P(MMA–GMA)修饰层的有机薄膜晶体管的光响应特性
DOI：
10.1088/0268-1242/25/11/115009
复制
发表时间：
2010-11
影响因子：
1.9
通讯作者：
中科院分区：
文献类型：
--
作者：
本文描述了以 SiO2 作为栅极电介质的并五苯基有机薄膜晶体管 (OTFT) 的光响应特性。工作电流显着增加，并且阈值电压在入射照明时向正偏压移动。分别在有和没有聚（甲基丙烯酸甲酯共聚甲基丙烯酸缩水甘油酯）（P（MMA-GMA））作为改性层的OTFT上观察到明显的光响应特性。在 0.64 µW cm−2 的较低照明功率下，有和没有 P(MMA–GAM) 的 OTFT 分别获得了 24 600 和 1173 A W−1 的最大光响应度。分析了相应的光响应机制，表明目前的有机光电晶体管性能强烈依赖于并五苯本体和并五苯/电介质界面处的陷阱密度。
This paper describes the photo-response characteristics of pentacene-based organic thin-film transistors (OTFTs) with SiO2 as the gate dielectric. The operation current increases significantly and the threshold voltage is shifted toward positive bias at the incident illumination. The distinguishable light responsive characteristics can be observed at the OTFTs with and without poly(methyl methacrylate co glycidyl methacrylate) (P(MMA–GMA)) as the modification layer, respectively. Maximum light responsivities of 24 600 and 1173 A W−1 were obtained for OTFTs with and without P(MMA–GAM), respectively, under the lower illumination power of 0.64 µW cm−2. The corresponding photo-response mechanisms were analyzed, which demonstrated that the present organic phototransistor properties have a strong dependence on the trap density at the pentacene bulk and the interface of pentacene/dielectric.
登录
查看更多内容
影响因子：
3.2
作者：
K. Wasapinyokul;W. Milne;D. Chu
通讯作者：
K. Wasapinyokul;W. Milne;D. Chu
影响因子：
4
作者：
M. Debucquoy;S. Verlaak;S. Steudel;K. Myny;Jan Genoe;P. Heremans
通讯作者：
M. Debucquoy;S. Verlaak;S. Steudel;K. Myny;Jan Genoe;P. Heremans
影响因子：
4
作者：
Se Hyun Kim;Danbi Choi;D. Chung;Chanwoo Yang;Jaeyoung Jang;Chan Eon Park;S. Park
通讯作者：
Se Hyun Kim;Danbi Choi;D. Chung;Chanwoo Yang;Jaeyoung Jang;Chan Eon Park;S. Park
影响因子：
4
作者：
T. Saragi;Robert Pudzich;T. Fuhrmann-Lieker;J. Salbeck
通讯作者：
T. Saragi;Robert Pudzich;T. Fuhrmann-Lieker;J. Salbeck
影响因子：
4
作者：
Mok, Sheung Man;Yan, Feng;Chan, Helen L. W.
通讯作者：
Chan, Helen L. W.