Improved p-type conductivity and acceptor states in N-doped ZnO thin films
Improved p-type conductivity and acceptor states in N-doped ZnO thin films
复制标题
N 掺杂 ZnO 薄膜中 p 型电导率和受主态的改善
DOI：
10.1088/0022-3727/40/10/022
复制
发表时间：
2007-05
影响因子：
3.4
通讯作者：
Liang, Qunian
中科院分区：
文献类型：
--
作者：
Lu, Jianguo;Fujita, Shizuo;Zhang, Yinzhu;Ye, Zhizhen;Liang, Qunian
以NO为氮掺杂源，采用磁控溅射法制备了N掺杂p型ZnO（ZnO：N）薄膜。在生长气氛中引入Ar可以显著提高ZnO：N薄膜的p型导电性和晶体质量，在Ar分压为30%时，ZnO：N薄膜的室温电阻率最低，为3.51 Ω cm。p型ZnO：N薄膜具有很高的光学质量，由温度依赖的光致发光谱表明。从自由态到中性受体态（e，A0）的跃迁中确定了能级为180 meV的N-O取代受体态.从中性受体束缚激子和自由激子的发射导出N O受体束缚激子的结合能为17 meV。ZnO中NO受体的Haynes因子约为0.094。在ZnO：N中，除了N O受主外，还发现了一个能级为255 meV的Zn空位（V Zn）受主态，这也可能对ZnO：N的p型导电性有贡献.
N-doped, p-type ZnO (ZnO: N) thin films were prepared by magnetron sputtering using NO as the N-doping source. The introduction of Ar in the growth ambient could evidently improve the p-type conductivity and crystal quality of the ZnO: N films, with the lowest room-temperature resistivity of 3.51 Ω cm obtained at an optimal Ar partial pressure of 30%. The p-type ZnO: N films have high optical quality, as suggested by temperature-dependent photoluminescence spectra. The N O substitution acceptor state with an energy level of 180 meV was identified from the free-to-neutral-acceptor (e, A 0) transition. The N O-acceptor bound-exciton binding energy was derived to be 17 meV from the neutral-acceptor-bound-exciton and free exciton emissions. The Haynes factor was about 0.094 for the N O acceptor in ZnO. Besides the N O acceptor, a zinc vacancy (V Zn) acceptor state with an energy level of 255 meV was also identified in ZnO: N from the (e, A 0) transition, which might also contribute to the observed p-type conductivity.
登录
查看更多内容
影响因子：
4.5
作者：
J. Lu;L. Zhu;Z. Ye;F. Zhuge;B. Zhao;D. Ma;L. Wang;J. Y. Huang
通讯作者：
J. Lu;L. Zhu;Z. Ye;F. Zhuge;B. Zhao;D. Ma;L. Wang;J. Y. Huang
影响因子：
4
作者：
Y. Ryu;T. S. Lee;H. White
通讯作者：
Y. Ryu;T. S. Lee;H. White
影响因子：
4
作者：
J. Rommeluère;L. Švob;F. Jomard;J. Mimila-Arroyo;A. Lusson;V. Sallet;Y. Marfaing
通讯作者：
J. Rommeluère;L. Švob;F. Jomard;J. Mimila-Arroyo;A. Lusson;V. Sallet;Y. Marfaing
影响因子：
4
作者：
Yujia Zeng;Z. Ye;Wendao Xu;Jinggang Lu;Haiping He;Luming Zhu;Binghui Zhao;Y. Che;Shengbai Zhang-Shen
通讯作者：
Yujia Zeng;Z. Ye;Wendao Xu;Jinggang Lu;Haiping He;Luming Zhu;Binghui Zhao;Y. Che;Shengbai Zhang-Shen
影响因子：
3.7
作者：
Kohan, AF;Ceder, G;Van de Walle, CG
通讯作者：
Van de Walle, CG