Evolution of secondary defects in arsenic implanted Si
Evolution of secondary defects in arsenic implanted Si
复制标题
砷注入硅中二次缺陷的演变
DOI：
10.7567/jjap.55.045504
复制
发表时间：
2016-03
影响因子：
1.5
通讯作者：
Huizhen Wu
中科院分区：
文献类型：
--
作者：
He Zhu;Huizhen Wu
离子注入半导体中的缺陷行为是一个永恒的话题，随着半导体器件尺寸的不断缩小和离子注入技术的日益广泛应用，这一问题变得更加重要。利用高分辨透射电子显微镜（HRTEM）和能量色散X射线（EDX）研究了砷（As）注入硅（Si）后的结构演变。通过高分辨透射电子显微镜观察到投影范围（PR）缺陷和范围末端（EOR）位错。EDX表征证明这两种缺陷与掺杂原子的沉淀有关。随着退火温度的升高，PR缺陷和EOR位错的尺寸都以牺牲小尺寸为代价而增大。电化学电容-电压和EDX的表征表明，SiO2/Si界面在退火过程中掺杂原子的失活中起着不可或缺的作用。As原子被检测到在注入的Si区附近的SiO2/Si界面，但不是在二氧化硅层。在1150 ° C退火的样品中观察到由SiO2层中的Si原子组成的纳米颗粒，这证明了氧原子在SiO2/Si界面处的迁移。
Behavior of defects in ion-implanted semiconductors is an everlasting topic and becomes even more critical as semiconductor devices continuously shrink and ion implantation technique has been increasingly employed. High resolution transmission electron microscope (HRTEM) and energy dispersive X-ray (EDX) were employed to investigate the structural evolution of arsenic (As) implanted silicon (Si). Project range (PR) defects and end of range (EOR) dislocations are observed via HRTEM. EDX characterization proves the two types of defects are related to dopant atoms precipitations. The sizes of both PR defects and EOR dislocations enlarge at the expense of small ones with the elevation of annealing temperature. The characterizations of electrochemical capacitance–voltage and EDX conclude that the SiO2/Si interface is playing an indispensable role in the deactivation of dopant atoms during the annealing process. As atoms are detected in the As-implanted Si region near the SiO2/Si interface but not in the silica layer. Nanoparticles composed of Si atoms in the silica layer are observed in the 1150 °C-annealed samples, which proves the migration of oxygen atoms at the SiO2/Si interface.
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影响因子：
41.2
作者：
T. D. de la Rubia;G. Gilmer
通讯作者：
T. D. de la Rubia;G. Gilmer
影响因子：
8.6
作者：
Pandey;Erbil;Cargill;Boehme;Vanderbilt
通讯作者：
Pandey;Erbil;Cargill;Boehme;Vanderbilt
影响因子：
3.2
作者：
A. Parisini;A. Bourret;A. Armigliato;M. Servidori;S. Solmi;R. Fabbri;J. Regnard;J. Allain
通讯作者：
A. Parisini;A. Bourret;A. Armigliato;M. Servidori;S. Solmi;R. Fabbri;J. Regnard;J. Allain
影响因子：
4
作者：
R. T. Fulks;C. Russo;P. R. Hanley;T. Kamins
通讯作者：
R. T. Fulks;C. Russo;P. R. Hanley;T. Kamins
影响因子：
3.1
作者：
Hisamoto, D;Lee, WC;Hu, CM
通讯作者：
Hu, CM