Influence of Substrate Temperature on Structural Properties and Deposition Rate of AlN Thin Film Deposited by Reactive Magnetron Sputtering
Influence of Substrate Temperature on Structural Properties and Deposition Rate of AlN Thin Film Deposited by Reactive Magnetron Sputtering
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基片温度对反应磁控溅射AlN薄膜结构性能和沉积速率的影响
DOI：
10.1007/s11664-012-1999-4
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发表时间：
2012-03
影响因子：
2.1
通讯作者：
Wang, Demiao
中科院分区：
文献类型：
--
作者：
Jin, Hao;Feng, Bin;Dong, Shurong;Zhou, Changjian;Zhou, Jian;Yang, Yi;Ren, Tianling;Luo, Jikui;Wang, Demiao
采用反应直流磁控溅射法制备了c轴择优取向的氮化铝（AlN）薄膜。用X射线衍射、扫描电子显微镜和原子力显微镜研究了在60°C ~ 520°C的不同衬底温度下生长在Si（100）衬底上的AlN薄膜的择优取向度、截面结构和表面形貌。结果表明，衬底温度对AlN薄膜的c轴择优取向度、摇摆曲线的半高宽、表面形貌、截面结构以及沉积速率等结构特性有显著影响。最佳衬底温度为430°C，对应的均方根表面粗糙度（Rrms）为1.97 nm，AlN（002）衍射半高宽（FWHM）为2.259°，沉积速率为20.86 nm/min。最后，制备了基于AlN薄膜的薄膜体声波谐振器，其典型机电耦合系数（kt 2）为5.1%，串联频率和并联频率分别为2.37 GHz和2.42 GHz。
Aluminum nitride (AlN) thin films withc-axis preferred orientation have been prepared by reactive direct-current (DC) magnetron sputtering. The degree of preferred crystal orientation, the cross-sectional structure, and the surface morphology of AlN thin films grown on Si (100) substrates at various substrate temperatures from 60°C to 520°C have been investigated by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. Results show that the substrate temperature has a significant effect on the structural properties, such as the degree ofc-axis preferred orientation, the full-width at half-maximum (FWHM) of the rocking curve, the surface morphology, and the cross-sectional structure as well as the deposition rate of the AlN thin films. The optimal substrate temperature is 430°C, with corresponding root-mean-square surface roughness (Rrms) of 1.97 nm, FWHM of AlN (002) diffraction of 2.259°, and deposition rate of 20.86 nm/min. The mechanisms behind these phenomena are discussed. Finally, film bulk acoustic resonators based on AlN films were fabricated; the corresponding typical electromechanical coupling coefficient (kt2) is 5.1% with series and parallel frequencies of 2.37 GHz and 2.42 GHz, respectively.
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影响因子：
2.1
作者：
T. Hu;S. Mao;C. Chao;M. F. Wu;Hsing-Lu Huang;D. Gan
通讯作者：
T. Hu;S. Mao;C. Chao;M. F. Wu;Hsing-Lu Huang;D. Gan
影响因子：
2.1
作者：
Y. Xi;K. Chen;F. Mont;J. K. Kim;E. Schubert;C. Wetzel;W. Liu;X. Li;J. Smart
通讯作者：
Y. Xi;K. Chen;F. Mont;J. K. Kim;E. Schubert;C. Wetzel;W. Liu;X. Li;J. Smart
影响因子：
2.1
作者：
M. Ishihara;H. Yumoto;T. Tsuchiya;K. Akashi
通讯作者：
M. Ishihara;H. Yumoto;T. Tsuchiya;K. Akashi
影响因子：
2.1
作者：
S. Hullavarad;R. Vispute;B. Nagaraj;V. N. Kulkarni;S. Dhar;T. Venkatesan;K. Jones;M. Derenge;T. Zheleva;M. Ervin;A. Lelis;C. Scozzie;D. Habersat;A. Wickenden;L. Currano;M. Dubey
通讯作者：
S. Hullavarad;R. Vispute;B. Nagaraj;V. N. Kulkarni;S. Dhar;T. Venkatesan;K. Jones;M. Derenge;T. Zheleva;M. Ervin;A. Lelis;C. Scozzie;D. Habersat;A. Wickenden;L. Currano;M. Dubey
影响因子：
4.1
作者：
T. Leung;C. Ong
通讯作者：
T. Leung;C. Ong