Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices.
Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices.
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DOI：
10.1038/s41598-017-06566-5
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发表时间：
2017-07-24
影响因子：
4.6
通讯作者：
Srinivasan K
中科院分区：
文献类型：
--
作者：
Sapienza L;Liu J;Song JD;Fält S;Wegscheider W;Badolato A;Srinivasan K
我们报告了一个单一的，孤立的自组装InAs量子点的光致发光成像和原子力显微镜研究相结合。这项工作的动机是确定一种方法，允许评估单量子点作为量子纳米光子器件的候选者。通过结合光学和扫描探针表征技术，我们发现，单量子点往往出现在附近的比较大的地形特征。尽管如此，与出现在无缺陷区域中的量子点相比，量子点通常在其非共振泵浦发射光谱中不表现出显著差异，并且在不同生长室中生产的多个晶片上观察到这种行为。然而，这种大的表面特征对其中单个量子点嵌入在纳米制造的光子器件内的应用是有害的：它们可能导致被设计为共振地增强量子点发射的腔模式的波长的大的光谱偏移，从而导致名义上完美制造的单个量子点器件不能根据设计表现。我们预计，筛选量子点的方法，不仅基于它们的光学性质，而且其周围的表面形貌，将是必要的，以提高单量子点纳米光子器件的产量。
We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots. The motivation of this work is to determine an approach that allows to assess single quantum dots as candidates for quantum nanophotonic devices. By combining optical and scanning probe characterization techniques, we find that single quantum dots often appear in the vicinity of comparatively large topographic features. Despite this, the quantum dots generally do not exhibit significant differences in their non-resonantly pumped emission spectra in comparison to quantum dots appearing in defect-free regions, and this behavior is observed across multiple wafers produced in different growth chambers. Such large surface features are nevertheless a detriment to applications in which single quantum dots are embedded within nanofabricated photonic devices: they are likely to cause large spectral shifts in the wavelength of cavity modes designed to resonantly enhance the quantum dot emission, thereby resulting in a nominally perfectly-fabricated single quantum dot device failing to behave in accordance with design. We anticipate that the approach of screening quantum dots not only based on their optical properties, but also their surrounding surface topographies, will be necessary to improve the yield of single quantum dot nanophotonic devices.
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影响因子：
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作者：
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