Low threshold voltage, highly stable electroforming-free threshold switching characteristics in VOx films-based device
Low threshold voltage, highly stable electroforming-free threshold switching characteristics in VOx films-based device
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VOx 薄膜器件中的低阈值电压、高度稳定的免电铸阈值开关特性
DOI：
10.1016/j.ceramint.2021.06.171
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发表时间：
2021-06
期刊：
影响因子：
--
通讯作者：
Hongyu Ma
中科院分区：
文献类型：
--
作者：
Guoqiang Li;Jianhong Wei;Hongjun Wang;Rui Xiong;Dengjing Wang;Yuanyuan Zhu;Yong Liu;Zhaorui Zou;Jing Xu;Hongyu Ma
阈值开关（TS）器件由于其在抑制交叉阵列结构中的串扰电流方面的重要意义而成为存储电路中最有前途的元件之一。然而，高阈值电压（Vth）和低稳定性的问题仍然限制了它们的潜在应用。这里，采用通过脉冲激光沉积（PLD）方法沉积的氧化钒（VOx）膜作为开关层来构造TS器件。具有Pt/VOx/Pt/PI结构的TS器件表现出非极性、无电铸和挥发性TS特性，具有超低Vth（+0.48 V/−0.48 V）。此外，TS器件还表现出高稳定性，在350个循环的耐久性测量后没有明显的性能下降。此外，该转变机制主要是由于VO 2的金属-绝缘体转变和氧空位的协同作用。此外，通过改变开关薄膜沉积过程中的氧分压，可以获得非易失的双极电阻开关特性。这项工作表明，钒氧化物薄膜是一个很好的候选人作为开关层的应用程序中的TS设备，并开辟了一条途径，为未来的电子。
Threshold switching (TS) devices have evolved as one of the most promising elements in memory circuit due to their important significance in suppressing crosstalk current in the crisscross array structure. However, the issue of high threshold voltage (Vth) and low stability still restricts their potential applications. Herein, the vanadium oxide (VOx) films deposited by the pulsed laser deposition (PLD) method are adopted as the switching layer to construct the TS devices. The TS devices with Pt/VOx/Pt/PI structure exhibit non-polar, electroforming-free, and volatile TS characteristics with an ultralow Vth(+0.48 V/−0.48 V). Besides that, the TS devices also demonstrates high stability, without obviously performance degradations after 350 cycles of endurance measurements. Additionally, the transition mechanism is mainly attributed to the synergistic effect of metal-insulator transition of VO2and oxygen vacancies. Furthermore, the nonvolatile bipolar resistance switching behaviors can be obtained by changing oxygen pressure during the deposition process for switching films. This work demonstrates that vanadium oxide film is a good candidate as switching layer for applications in the TS devices and opens an avenue for future electronics.
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