Evolution of optical properties and band structure from amorphous to crystalline Ga2O3 films
Evolution of optical properties and band structure from amorphous to crystalline Ga2O3 films
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从非晶态到晶态 Ga2O3 薄膜的光学特性和能带结构的演变
DOI：
10.1063/1.5021867
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发表时间：
2018-04
期刊：
影响因子：
1.6
通讯作者：
Qixin Guo
中科院分区：
文献类型：
--
作者：
Fabi Zhang;Haiou Li;Yi-Tao Cui;Guo-Ling Li;Qixin Guo
本文研究了从非晶态到晶态的Ga2O_3薄膜的光学性质和能带结构演化。通过改变脉冲激光沉积的衬底温度，获得了非晶态和晶态的Ga2O_3薄膜，其结晶度随衬底温度的升高而增加。用分光光度计测得薄膜的禁带宽度和紫外光发射强度随结晶度的增加而增大。在非晶态向晶态转变的过程中，观察到了禁带宽度和化学发光的突变。X射线光电子能谱核心能级谱表明，在较低的衬底温度下生长的非晶态Ga2O_3薄膜中存在较多的氧空位和无序。硬X射线光电子能谱对衬底温度为500℃的晶体薄膜的价带谱贡献主要来自Ga4Sp，而在薄膜中观察到了额外的亚能带态。
The optical properties and band structure evolution from amorphous to crystalline Ga2O3 films was investigated in this work. Amorphous and crystalline Ga2O3 films were obtained by changing the growth substrate temperatures of pulsed laser deposition and the crystallinity increase with the rising of substrate temperature. The bandgap value and ultraviolet emission intensity of the films increase with the rising of crystallinity as observed by means of spectrophotometer and cathodoluminescence spectroscopy. Abrupt bandgap value and CL emission variations were observed when amorphous to crystalline transition took place. X-ray photoelectron spectroscopy core level spectra reveal that more oxygen vacancies and disorders exist in amorphous Ga2O3 film grown at lower substrate temperature. The valence band spectra of hard X-ray photoelectron spectroscopy present the main contribution from Ga 4sp for crystalline film deposited at substrate temperature of 500 oC, while extra subgap states has been observed in amor...
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