Detection of reverse recovery characteristics of power diodes
Detection of reverse recovery characteristics of power diodes
复制标题
功率二极管反向恢复特性的检测
DOI：
10.1049/iet-pel.2015.0203
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发表时间：
2016-03
影响因子：
2
通讯作者：
Shen, Qi
中科院分区：
文献类型：
--
作者：
Wei, Wensheng;Luo, Fei;Zhang, Chunxi;Shen, Qi
建立了一套测量功率器件（DUT）电流I rr和电压V rr的反向恢复（RR）波形、RR时间t rr、RR电荷Q rr以及RR峰值电压V rm的绝对值与反向偏置脉冲电压V r的幅值之比C等参数的装置。正向脉冲电流If和Vr由中央处理单元（CPU）产生。IF的幅度由晶体管放大，而刻度通过达林顿阵列控制继电器来调节，以改变连接到晶体管发射极的不同电阻以施加在DUT上。Vr脉冲先经施密特触发器整形，再经金属氧化物半导体场效应晶体管（MOSFET）放大，同时通过达林顿控制继电器改变MOSFET漏极上的不同电感来调节边沿振荡速率dIf/dt，从而偏置在DUT上。可以用示波器观察波形，并进行采样以进行进一步的数字处理。通过键盘输入测试参数，由主机CPU控制测试结果的计算和显示。通过液晶显示器（LCD）可以监控参数和计量结果。
A setup was constituted for measuring reverse recovery (RR) waveforms of current I rr and voltage V rr, RR time t rr, RR charges Q rr, as well as the ratio C of absolute value of RR peak voltage V rm to amplitude of reverse biased pulse voltage V r and so on, for power device under test (DUT). Forward pulse current I f and the V r were generated from a central processing unit (CPU). Amplitude of I f was magnified by a transistor, while the scale was regulated via a Darlington array controlling relays for altering different resistors connected to emitter of the transistor to apply on DUT. Pulse of V r was first shaped by a Schmitt trigger and then was magnified by a metal–oxide–semiconductor field-effect transistor (MOSFET), while the edge commutating rate dI f/dt was adjusted through the Darlington controlling relays for changing different inductors linked to drain of the MOSFET to bias on DUT. The waveforms can be observed with an oscilloscope and sampled for further digitally processing. Inputting test parameters via keyboard, calculating and displaying of test results can be controlled by a host CPU. The parameters and metering results can be monitored by a liquid crystal displayer (LCD).
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影响因子：
2
作者：
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通讯作者：
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影响因子：
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影响因子：
2
作者：
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通讯作者：
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影响因子：
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作者：
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通讯作者：
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