Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes
Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes
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InGaN发光二极管V形凹坑侧壁量子阱的电致发光
DOI：
10.1063/1.4880731
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发表时间：
2014-06
影响因子：
4
通讯作者：
Jiang Fengyi
中科院分区：
文献类型：
--
作者：
Wu Xiaoming;Liu Junlin;Quan Zhijue;Xiong Chuanbing;Zheng Changda;Zhang Jianli;Mao Qinghua;Jiang Fengyi
研究了重掺Mg和非故意掺杂（UID）低温Al 0. 2Ga 0. 8 N电子阻挡层（EBL）的InGaN/GaN多量子阱（MQW）发光二极管。在低温下，UID-EBL样品出现了较宽的短波长电致发光峰，该峰相对于主发光强度较强。研究表明，宽峰是由侧壁多量子阱发射的。这一结果表明，侧壁多量子阱的电致发光，其中载流子密度足够高，可以在低温下检测。随电流密度的线形变化揭示了载流子注入到侧壁多量子阱的过程中的详细信息。
InGaN/GaN multi-quantum well (MQW) light emitting diodes with heavily Mg doped and unintentionally doped (UID) low-temperature Al0.2Ga0.8N electron blocking layer (EBL) were investigated. Broad short-wavelength electroluminescence peak, which has strong relative intensity to the main emission, was found in the UID-EBL sample at cryogenic temperatures. Study suggests that the broad peak is emitted by the sidewall MQWs. This result indicates that the electroluminescence of sidewall MQWs, in which the carrier density is high enough, can be detected at cryogenic temperatures. The lineshape variation with current density reveals detailed information on the process of carrier injection into the sidewall MQWs.
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影响因子：
3.7
作者：
Reshchikov, MA;Yi, GC;Wessels, BW
通讯作者：
Wessels, BW
影响因子：
3.6
作者：
Chuanbing Xiong;F. Jiang;Wenqing Fang;Li Wang;Chunnan Mo;Hechu Liu
通讯作者：
Chuanbing Xiong;F. Jiang;Wenqing Fang;Li Wang;Chunnan Mo;Hechu Liu
影响因子：
4
作者：
Chen, Y;Takeuchi, T;Wang, SY
通讯作者：
Wang, SY
影响因子：
3.2
作者：
Xiaoming Wu;Junlin Liu;Chuanbing Xiong;Jianli Zhang;Z. Quan;Qinghua Mao;F. Jiang
通讯作者：
Xiaoming Wu;Junlin Liu;Chuanbing Xiong;Jianli Zhang;Z. Quan;Qinghua Mao;F. Jiang
影响因子：
4
作者：
M. Smith;J. Lin;Hongxing Jiang;A. Khan;Q. Chen;A. Salvador;A. Botchkarev;W. Kim;H. Morkoç-
通讯作者：
M. Smith;J. Lin;Hongxing Jiang;A. Khan;Q. Chen;A. Salvador;A. Botchkarev;W. Kim;H. Morkoç-