Band engineering for surface emission enhancement in Al-rich AlGaN-based deep-ultraviolet light emitting diodes
Band engineering for surface emission enhancement in Al-rich AlGaN-based deep-ultraviolet light emitting diodes
复制标题
富铝 AlGaN 基深紫外发光二极管表面发射增强的能带工程
DOI：
10.7567/jjap.55.05fj12
复制
发表时间：
2016-04
影响因子：
1.5
通讯作者：
Huimin Lu
中科院分区：
文献类型：
--
作者：
Huimin Lu
The optical polarization properties of Al-rich AlGaN/AlN quantum wells (QWs) with different structure parameters were analyzed using the modified theoretical model based on the effective mass equation. It is demonstrated that the optical polarization properties of AlGaN-based QWs are determined by the valence subband structure, including the energy level order and the valence subband coupling. The results show that the TE-polarized emission is enhanced in Al-rich AlGaN/AlN QWs with smaller well width, a buffer layer inducing compressive stress, and a staggered well layer owing to the change in the valence subband structure. Hence, the enhancement of surface emission from deep-ultraviolet (DUV) AlGaN-based light-emitting diodes (LEDs) can be realized by adjusting the QW structure parameters to induce a valence subband change.
登录
查看更多内容
探索在不同模板上生长的 AlGaN 和 AlInN 合金的最佳紫外发射窗口
影响因子：
1.6
作者：
Fu, D.;Zhang, R.;Liu, B.;Xie, Z. L.;Xiu, X. Q.;Lu, H.;Zheng, Y. D.;Edwards, G.
通讯作者：
Edwards, G.
影响因子：
4
作者：
T. Tahtamouni;Jingyu Lin;Hongxing Jiang
通讯作者：
T. Tahtamouni;Jingyu Lin;Hongxing Jiang
影响因子：
3.7
作者：
Chuang, SL;Chang, CS
通讯作者：
Chang, CS
影响因子：
4
作者：
Nam, KB;Li, J;Jiang, HX
通讯作者：
Jiang, HX
影响因子：
4
作者：
Zhang, Jing;Zhao, Hongping;Tansu, Nelson
通讯作者：
Tansu, Nelson