Effect of processing conditions on residual stress in sputtered transition metal nitrides (TiN, ZrN and TaN): Experiments and modeling

Effect of processing conditions on residual stress in sputtered transition metal nitrides (TiN, ZrN and TaN): Experiments and modeling
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加工条件对溅射过渡金属氮化物(TiN、ZrN 和 TaN)残余应力的影响:实验和建模

DOI:
10.1016/j.surfcoat.2022.128880
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发表时间:
2022
影响因子:
5.4
通讯作者:
Chason, Eric
Chason, Eric
中科院分区:
材料科学1区
文献类型:
--
作者:
Rao, Zhaoxia;Su, Tong;Koenig, Thomas;Thompson, Gregory B.;Depla, Diederik;Chason, Eric

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采用圆片曲率技术测量了不同生长速率、不同气压和不同相对气体流量下TiN、ZrN和TaN薄膜反应直流磁控溅射沉积过程中的应力演化。结果表明,对于给定的生长速率,每种材料中的应力在较高的压力下是拉伸的,并且在较低的压力下变得更压缩。在较低的压力下,随着生长速率的增加,应力趋于变得更压缩。观察到增加N2相对于Ar的气体流速以增强TaN中的压应力产生,但对TiN和ZrN具有较弱的影响。在较低压力下,压应力大小与TiN < ZrN < TaN成比例。在不同的处理条件下的应力进行了分析的动力学模型,其中包括生长动力学和高能轰击的影响。所得的参数进行了比较,从二进制碰撞蒙特-卡罗模拟代码的计算。
Stress evolution during reactive DC magnetron sputtering deposition in TiN, ZrN and TaN films at different growth rates, pressures and relative gas flow rates was measured by a wafer curvature technique. The results indicate that, for a given growth rate, the stress in each material is tensile at higher pressures and becomes more compressive with lower pressures. At lower pressures, the stress tends to become more compressive with increasing growth rate. Increasing the gas flow rate of N2relative to Ar is observed to enhance compressive stress generation in TaN but has a weaker effect on TiN and ZrN. At lower pressure, the compressive stress magnitude scales with TiN < ZrN < TaN. The stress at different processing conditions was analyzed in terms of a kinetic model that includes the effects of growth kinetics and energetic bombardment. The resulting parameters are compared with calculations from binary collision Monte-Carlo simulation codes.
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