Enhanced ferroelectric properties of Hf-doped bismuth titanate thin films on STO (111) substrates
Enhanced ferroelectric properties of Hf-doped bismuth titanate thin films on STO (111) substrates
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STO（111）衬底上掺铪钛酸铋薄膜的铁电性能增强
DOI：
10.1063/1.2996080
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发表时间：
2008-10
影响因子：
3.2
通讯作者：
Luo, W.B.
中科院分区：
文献类型：
--
作者：
Zhu, J.;Zhang, Y.;Wang, X.P.;Li, Y.R.;Luo, W.B.
采用脉冲激光沉积法在（111）SrTiO 3衬底上制备了Bi 4 Ti 3 O 12（BIT）和Hf掺杂BIT（BTH）薄膜。X射线光电子能谱研究表明，Hf的掺杂增强了BTH中氧与B位离子的共价键，从而使BTH中BO 6八面体结构得到巩固。X射线衍射扫描（θ-2θ和Φ扫描）证实，两种薄膜均为高度（104）取向，并呈现三孪晶结构。与BIT薄膜相比，BTH薄膜具有显著提高的电学性能，其反射极化（2 Pr =45.7 μC/cm 2）提高了3倍，矫顽场（2 Ec =184 kV/cm）降低了0.7倍，疲劳寿命提高了11.4%。 离子半径的差异和BO_6八面体结构中共价性的增强是导致2 Pr值提高的两个方面。提高疲劳性能的主要原因是氧化剂具有较高的激活能。
Bi4Ti3O12 (BIT) and Hf-doped BIT (BTH) thin films have been fabricated on (111) SrTiO3 substrates with SrRuO3 bottom electrodes by pulsed laser deposition, respectively. X-ray photoelectron spectroscopy investigation revealed that Hf doping would strengthen the oxygen covalent bond to B-site ions, which could consolidate the BO6 octahedral structure in BTH. As confirmed by x-ray diffraction scans, including θ-2θ and Φ scans, both films were highly (104) oriented and showed triple-twin situation. Compared to the BIT films, the BTH films have significantly enhanced electrical properties with 3 times larger remanent polarization (2Pr=45.7 μC/cm2), 0.7 times smaller coercive field (2Ec=184 kV/cm), and better fatigue endurance (11.4% degradation). The difference of ionic radius and the strengthened covalency in BO6 octahedral structure are supposed to be the two aspects resulting in the enhancement of 2Pr value. The improved fatigue properties could be believed to result from the high activation energies of ox...
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影响因子：
4
作者：
S. T. Zhang;X. Zhang;Hong-Wei Cheng;Yan-feng Chen;Zu-liang Liu;N. Ming;Xiaobo Hu;Jun Wang
通讯作者：
S. T. Zhang;X. Zhang;Hong-Wei Cheng;Yan-feng Chen;Zu-liang Liu;N. Ming;Xiaobo Hu;Jun Wang
影响因子：
56.9
作者：
Lee, HN;Hesse, D;Gösele, U
通讯作者：
Gösele, U
影响因子：
64.8
作者：
DEARAUJO, CAP;CUCHIARO, JD;SCOTT, JF
通讯作者：
SCOTT, JF
影响因子：
3.2
作者：
Takayuki Watanabe;A. Saiki;K. Saito;H. Funakubo
通讯作者：
Takayuki Watanabe;A. Saiki;K. Saito;H. Funakubo
影响因子：
4
作者：
EOM, CB;VANDOVER, RB;FORK, DK
通讯作者：
FORK, DK