Characterization and Modeling of Frequency-Dependent On-Resistance for GaN Devices at High Frequencies
Characterization and Modeling of Frequency-Dependent On-Resistance for GaN Devices at High Frequencies
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高频 GaN 器件频率相关导通电阻的表征和建模
DOI：
10.1109/tpel.2019.2947075
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发表时间：
2020-05
影响因子：
6.7
通讯作者：
Qiu Aici
中科院分区：
文献类型：
--
作者：
Wang Kangping;Li Bingyang;Li Hongchang;Yang Xu;Qiu Aici
基于氮化镓的功率变换器的开关频率已经被推到几兆赫兹甚至更高。在如此高的频率下，GaN器件的导通电阻可能远高于其直流值，特别是对于导通电阻低的器件。本文首次通过电学和热实验研究了导通电阻的频率特性。提出了一种用于有限元仿真的装置模型来说明其机理。结果表明，导通电阻的频率依赖特性与GaN器件内部电流分布密切相关，并受器件布局的影响。提出了一种4深度阶梯电路模型来描述GaN器件的频率相关电阻，并证明了该模型在感兴趣的频率范围内具有良好的准确性。此外，设计了两种基于GaN的10 MHz dc-dc转换器，唯一的区别在于GaN器件周围的布局。实验结果表明，优化后的转炉效率可提高2%左右。
The switching frequencies of the GaN-based power converters have been pushed to several megahertz and even higher. At such high frequencies, the on-resistances of the GaN devices might be much higher than their dc values, especially for the devices with low on-resistances. The frequency-dependent characteristics of the on-resistance are studied through the electrical and thermal experiments for the first time in this article. A device model for the finite element simulation is proposed to illustrate the mechanism. The results show that the frequency-dependent characteristics of the on-resistance are closely related to the current distribution inside the GaN device and affected by the layout. A 4-depth ladder circuit model is proposed to describe the frequency-dependent on-resistance of the GaN devices, and it proves a good accuracy in the frequency range of interest. Beside, two GaN-based 10 MHz dc–dc converters were designed, the only difference of which comes from the layout around GaN devices. The experimental results show that the efficiency of the converter with the optimized layout can be improved by around 2%.
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