Investigation of Deformation Fluctuation of IGBT Chips Under Switching Conditions Using the Dynamic Field Reconstruction Method
Investigation of Deformation Fluctuation of IGBT Chips Under Switching Conditions Using the Dynamic Field Reconstruction Method
复制标题
利用动态场重建方法研究开关条件下 IGBT 芯片的变形脉动
DOI：
10.1109/tpel.2022.3214807
复制
发表时间：
2023-02
影响因子：
6.7
通讯作者：
Yuhua Cheng
中科院分区：
文献类型：
--
作者：
Jiahao Wang;Libing Bai;Cong Chen;Jie Zhang;Quan Zhou;Lulu Tian;Jun Luo;Wei Huang;Yuhua Cheng
绝缘栅双极晶体管（IGBT）芯片是电力电子模块中的关键核心器件。研究IGBT芯片在电-热-力耦合作用下的变形特性具有重要意义。本文提出了一种基于激光扫描位移测量的场重构技术，以准确获取IGBT芯片表面动态变形场分布。在此基础上，全面研究了开关条件对IGBT芯片形变波动特性的影响。结果表明，IGBT芯片的中间区域相比于边缘区域遭受相对较大的变形。特别地，最大的变形波动发生在键合线的根部附近。此外，还观察到变形波动与开关频率呈负相关，与负载幅值呈正相关，且随占空比的增大呈现先增大后减小的趋势。该工作为IGBT芯片动态变形场的表征提供了一种直观有效的方法。此外，本文的研究结果也为更精确地分析和评估电力电子模块的可靠性提供了可靠的依据和重要数据。
Insulated gate bipolar transistor (IGBT) chips are crucial core components in power electronic modules. It is of great significance to investigate the deformation characteristics of IGBT chips induced by the electro-thermal-mechanical coupling. In this article, a field reconstruction technique based on scanning laser displacement measurement is developed to accurately capture the dynamic deformation field distribution on the surface of IGBT chips. Based on this method, a comprehensive investigation of the impacts of switching conditions on the deformation fluctuation characteristics of IGBT chips is implemented. The results indicate the middle region of the IGBT chip suffers from a relatively larger deformation compared to the edge area. In particular, the largest deformation fluctuation occurs near the heel of bonding wires. In addition, it is also observed that the deformation fluctuation is negatively correlated with the switching frequency, meanwhile positively related to load amplitude, and shows a trend of increasing first, and then, decreasing with duty cycle. This work provides an intuitive and effective method for the dynamic deformation field characterization of IGBT chips. Furthermore, the outcomes obtained in this article can also provide confident evidence and important data to facilitate more precise reliability analysis and evaluation for power electronic modules.
登录
查看更多内容
DOI：
10.1109/epe.2014.6910840
发表时间：
2014-09
期刊：
2014 16th European Conference on Power Electronics and Applications
影响因子：
--
作者：
T. Karkkainen;J. Talvitie;Oskari Ikonen;M. Kuisma;P. Silventoinen;E. Mengotti
通讯作者：
T. Karkkainen;J. Talvitie;Oskari Ikonen;M. Kuisma;P. Silventoinen;E. Mengotti
DOI：
10.1016/j.microrel.2012.06.081
发表时间：
2012-09
期刊：
Microelectron. Reliab.
影响因子：
--
作者：
B. Czerny;M. Lederer;B. Nagl;Alexander Trnka;G. Khatibi;M. Thoben
通讯作者：
B. Czerny;M. Lederer;B. Nagl;Alexander Trnka;G. Khatibi;M. Thoben
影响因子：
1.6
作者：
Lu, Hua;Bailey, Chris;Yin, Chunyan
通讯作者：
Yin, Chunyan
DOI：
10.1109/apec.2016.7468291
发表时间：
2016-03
期刊：
2016 IEEE Applied Power Electronics Conference and Exposition (APEC)
影响因子：
--
作者：
M. Haque;J. Baek;Joseph Herbert;Seungdeog Choi
通讯作者：
M. Haque;J. Baek;Joseph Herbert;Seungdeog Choi
影响因子：
6.7
作者：
Karkkainen, Tommi J.;Talvitie, Joonas P.;Silventoinen, Pertti
通讯作者：
Silventoinen, Pertti