Cracking mechanism of CdZnTe polycrystalline film deposited on TFT circuit board at high temperature by close-spaced sublimation method
Cracking mechanism of CdZnTe polycrystalline film deposited on TFT circuit board at high temperature by close-spaced sublimation method
复制标题
近距离升华法高温沉积在TFT电路板上的CdZnTe多晶薄膜的破裂机理
DOI：
10.1016/j.mssp.2021.105821
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发表时间：
2021-08
影响因子：
4.1
通讯作者：
Tingting Tan
中科院分区：
文献类型：
--
作者：
Yiwei Li;Wenyu Zhang;Kun Cao;Yang Li;Gangqiang Zha;Tingting Tan
本文采用近距离升华(CSS)技术在TFT电路板和ITO/TFT衬底上生长了多晶薄膜。用X射线衍射仪、扫描电子显微镜和能谱仪对CZT多晶薄膜的物相、形貌和结构进行了表征，并对TFT电路板上沉积的CZT薄膜的高温开裂机理进行了研究。结果表明，在实验过程中，衬底温度过高，释放了Al膜和ITO膜之间的应力，产生了小的丘陵，使ITO和CZT膜的结合力大于ITO膜和Mo/Al/Mo膜，导致CZT膜脱落。TFT电路板上SiNx的存在可以促进CZT薄膜的断裂。
In this paper, CdZnTe polycrystalline films are grown on TFT circuit boards and ITO/TFT substrates by using close-spaced sublimation (CSS) technique. The phase, morphology and structure of CZT polycrystalline film were characterized by XRD, SEM and EDS, and the cracking mechanism of CZT film deposited on TFT circuit board at high temperature was studied. The results show that the substrate temperature was too high during experiment, which released the stress between Al film and ITO film, produced small hills, and made the binding force of ITO and CZT film greater than that of ITO film and Mo/Al/Mo, resulting in CZT film falling off. The presence of SiNx on TFT circuit board can promote the rupture of CZT film.
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影响因子：
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作者：
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DOI：
10.1016/j.nima.2006.01.110
发表时间：
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影响因子：
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