Thermoelectric Properties of an Al-Doped In-Sn-Te-Based Alloy
Thermoelectric Properties of an Al-Doped In-Sn-Te-Based Alloy
复制标题
掺Al In-Sn-Te 基合金的热电性能
DOI:
10.1007/s11664-010-1462-3
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发表时间:
2011-05
期刊:
影响因子:
--
通讯作者:
Zhang Xiaojun
中科院分区:
文献类型:
--
作者:
Yan Yanming;Ying Pengzhan;Fu Hong;Cui Jiaolin;Zhang Xiaojun
In-Sn-Te-based alloys usually have low electrical and thermal conductivity. In the present work we substituted Al for In in an In-Sn-Te alloy and prepared an (In1.9Al0.1Te3)0.08(SnTe)0.92alloy by spark plasma sintering. Substitution of Al for In favors the formation of indium impurity levels in this structure and accounts for the decrease of the band gap (Eg) and much of the increase of mobility and electrical conductivity. The thermal conductivity decreases from 1.72 W K−1m−1to 1.44 W K−1m−1with temperature, while that of the (In2Te3)0.08(SnTe)0.92alloy increases from 2.29 W K−1m−1to 3.50 W K−1m−1. The thermoelectric figure of merit (ZT) of the sample increases with measurement temperature, and the highestZTvalue of 0.28 was obtained at 668 K, being a factor of 4.5 greater than the maximumZTvalue for the Al-free (In2Te3)0.08(SnTe)0.92alloy at 510 K.
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影响因子:
4
作者:
J. Rhyee;Eunseog Cho;Kyu Hyoung Lee;S. M. Lee;Sang Il Kim;Hyun Sik Kim;Y. Kwon;Sung‐Jin Kim
通讯作者:
J. Rhyee;Eunseog Cho;Kyu Hyoung Lee;S. M. Lee;Sang Il Kim;Hyun Sik Kim;Y. Kwon;Sung‐Jin Kim
影响因子:
56.9
作者:
Harman, TC;Taylor, PJ;LaForge, BE
通讯作者:
LaForge, BE
影响因子:
3.2
作者:
S. Shigetomi;H. Ohkubo;T. Ikari;H. Nakashima
通讯作者:
S. Shigetomi;H. Ohkubo;T. Ikari;H. Nakashima
DOI:
10.4028/www.scientific.net/msf.650.126
发表时间:
2010-05
期刊:
Materials Science Forum
影响因子:
--
作者:
H. Fu;P. Ying;J. Cui;Y. Yan;X.J. Zhang
通讯作者:
H. Fu;P. Ying;J. Cui;Y. Yan;X.J. Zhang
影响因子:
64.8
作者:
Rhyee, Jong-Soo;Lee, Kyu Hyoung;Kotliar, Gabriel
通讯作者:
Kotliar, Gabriel