Thermoelectric Properties of an Al-Doped In-Sn-Te-Based Alloy

Thermoelectric Properties of an Al-Doped In-Sn-Te-Based Alloy
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掺Al In-Sn-Te 基合金的热电性能

DOI:
10.1007/s11664-010-1462-3
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发表时间:
2011-05
期刊:
J Electron. Mater.40(5),2011, 937-941
影响因子:
--
通讯作者:
Zhang Xiaojun
Zhang Xiaojun
中科院分区:
其他
文献类型:
--
作者:
Yan Yanming;Ying Pengzhan;Fu Hong;Cui Jiaolin;Zhang Xiaojun

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In-Sn-Te基合金通常具有低的电导率和热导率。本文以Al代替In,采用放电等离子烧结法制备了(In_(1.9)Al_(0.1)Te_3)_(0.08)(SnTe)_(0.92)合金。用Al取代In有利于在这种结构中形成铟杂质水平,并导致带隙(Eg)的减小和迁移率和电导率的大部分增加。热导率随温度从1.72 W K− 1 m − 1降低到1.44 W K− 1 m − 1,而(In 2 Te 3)0.08(SnTe)0.92合金的热导率从2.29 W K− 1 m − 1增加到3.50 W K− 1 m −1。样品的热电优值(ZT)随测量温度的升高而增大,在668 K时达到最大值0.28,比无Al的(In 2 Te 3)0.08(SnTe)0.92合金在510 K时的最大ZT值大4.5倍。
In-Sn-Te-based alloys usually have low electrical and thermal conductivity. In the present work we substituted Al for In in an In-Sn-Te alloy and prepared an (In1.9Al0.1Te3)0.08(SnTe)0.92alloy by spark plasma sintering. Substitution of Al for In favors the formation of indium impurity levels in this structure and accounts for the decrease of the band gap (Eg) and much of the increase of mobility and electrical conductivity. The thermal conductivity decreases from 1.72 W K−1m−1to 1.44 W K−1m−1with temperature, while that of the (In2Te3)0.08(SnTe)0.92alloy increases from 2.29 W K−1m−1to 3.50 W K−1m−1. The thermoelectric figure of merit (ZT) of the sample increases with measurement temperature, and the highestZTvalue of 0.28 was obtained at 668 K, being a factor of 4.5 greater than the maximumZTvalue for the Al-free (In2Te3)0.08(SnTe)0.92alloy at 510 K.
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