Enhancement of Negative Differential Mobility Effect in Recessed Barrier Layer AlGaN/GaN HEMT for Terahertz Applications
Enhancement of Negative Differential Mobility Effect in Recessed Barrier Layer AlGaN/GaN HEMT for Terahertz Applications
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用于太赫兹应用的凹陷势垒层 AlGaN/GaN HEMT 中负微分迁移率效应的增强
DOI：
10.1109/ted.2019.2893640
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发表时间：
2019-02
影响因子：
3.1
通讯作者：
Yue Hao
中科院分区：
文献类型：
--
作者：
Hongliang Zhao;Lin-An Yang;Zou Hao;Xiao-Hua Ma;Yue Hao
提出了一种用于太赫兹应用的微米级AlGaN/GaN高电子迁移率晶体管（HEMT）的凹陷势垒层（RBL）结构。通过数值模拟发现，合理设计的RBL结构可以触发二维电子气（2-DEG）通道中电子畴的形成和传播。其结果是，基频甚至可以扩展到太赫兹范围，并且可以通过肖特基接触栅的偏压在一定范围内进行调谐，肖特基接触栅就像陷波掺杂耿氏二极管一样充当热电子注入器。模拟结果表明，在-0.2-0.4 V的正常栅偏压下，具有深度为10-15 nm，长度为200-400 nm的RBL结构的0.3 ~ μ m栅HEMT可以产生0.8-1.6 THz范围内稳定的可调谐振荡，以及RF/DC电流分量的比率范围为3.04%至7.2%。这些可用的特性来自于2-DEG沟道中的电场重新分布。与以往报道的无栅和顶栅平面古恩二极管相比，RBL结构的AlGaN/GaN HEMT易于制作和工作，在太赫兹辐射源方面具有很大的应用潜力。
A recessed barrier layer (RBL) structure is proposed in themicrometer-sized AlGaN/GaN high-electron mobility transistor (HEMT) for terahertz applications. It is found by using numerical simulation that the properly designed RBL structure can trigger the formation and propagation of electron domains in the 2-D electron gas (2-DEG) channel. As a result, the fundamental frequency can be extended even up to terahertz regime, and also it can be tuned in a certain range by the bias voltage of Schottky contact gate that acts as a hot-electron injector just like the notch-dopedGunn diode. Our simulations showthat the 0.3- $\mu \text{m}$ -gate HEMT with the RBL structure having the depth of 10–15 nm and the length of 200–400 nm can generate the stable and tunable oscillations in the range of around 0.8–1.6 THz under the normally gate bias of −0.2–0.4 V, as well as the ratio of RF-to-dc current component ranging from 3.04% to 7.2%. These available characteristics come from the redistribution of electric field in the 2-DEG channel. Compared with the ungated and the top-gated planar Gunn diodes ever reported, the proposed RBL structural AlGaN/GaN HEMT can be easily fabricated and operated under normal conditions, demonstrating a great potential application in terahertz radiation sources.
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DOI：
10.1049/ip-cds:20040199
发表时间：
2004-04
期刊：
--
影响因子：
--
作者：
A. Matulionis;J. Liberis
通讯作者：
A. Matulionis;J. Liberis
影响因子：
4.3
作者：
M. Zybura;J. R. Jones;S. Jones;G. Tait
通讯作者：
M. Zybura;J. R. Jones;S. Jones;G. Tait
影响因子：
4.9
作者：
Khalid, A.;Pilgrim, N. J.;Cumming, D. R. S.
通讯作者：
Cumming, D. R. S.
影响因子：
3.2
作者：
Bhapkar, UV;Shur, MS
通讯作者：
Shur, MS
影响因子：
3.1
作者：
Shinohara, Keisuke;Regan, Dean C.;Micovic, Miroslav
通讯作者：
Micovic, Miroslav