Enhanced localisation effect and reduced quantum-confined Stark effect of carriers in InGaN/GaN multiple quantum wells embedded in nanopillars
Enhanced localisation effect and reduced quantum-confined Stark effect of carriers in InGaN/GaN multiple quantum wells embedded in nanopillars
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嵌入纳米柱的 InGaN/GaN 多量子阱中增强载流子的局域效应并降低量子限制斯塔克效应
DOI：
10.1016/j.jlumin.2018.06.024
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发表时间：
2018-11
影响因子：
3.6
通讯作者：
Xiangang Xu
中科院分区：
文献类型：
--
作者：
Xinglian Xu;Qiang Wang;Changfu Li;Ziwu Ji;Mingsheng Xu;Haifang Yang;Xiangang Xu
传统的平面InGaN/GaN多量子阱(MQW)发光二极管(LED)由于InGaN势垒层中的相分离而产生蓝绿双波长光谱，通过自顶向下的干法腐蚀工艺生长并制备成腐蚀深度穿透MQW区域的纳米级(NP)LED阵列结构。平面和NP样品的光致发光(PL)谱的激发功率和温度关系表明，纳米结构的制备不仅降低了量子限制斯塔克效应(QCSE)，而且由于嵌入在纳米柱中的MQW中应变弛豫压电场的降低，在InGaN基质区域和富In准量子点(QD)区域都增强了载流子局域化效应。此外，纳米结构的制备还提高了光提取效率(Lee)，这是因为增加了光提取表面积和光引导效应。这些结果也与测量的两个样品的量子效率相一致。
A conventional planar InGaN/GaN multiple quantum well (MQW)-based light emitting diode (LED) producing a blue-green dual-wavelength spectrum, due to phase separation in the InGaN well layers, is grown, and fabricated into a nanopillar (NP) LED array structure with an etching depth penetrating through the MQW region using a top-down dry etching process. Excitation power and temperature dependences of the photoluminescence (PL) spectra of the planar and NP samples have shown that the fabrication of the nanotexture not only decreases the quantum-confined Stark effect (QCSE), but also enhances the carrier localisation effect, both in the InGaN matrix region and in the In-rich quasi-quantum dot (QD) region, due to the reduction of the strain relaxation-induced piezoelectric field in the MQWs embedded in the nanopillars. Moreover, the fabrication of the nanotexture also improves the light extraction efficiency (LEE), due to the increased light-extracting surface area and light-guiding effect. These results are also consistent with the measured quantum efficiencies of the two samples.
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